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Kyocera AVX Components 100B241JT200XT1K CAP CER 240PF 200V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B241JT200XT1K	Digi-Reel	8,300		1	1 $6.25 10 $4.259 100 $3.2014 1000 $2.77126 10000 $2.77126	Buy Now
	100B241JT200XT1K	Cut Tape	8,300		1	1 $6.25 10 $4.259 100 $3.2014 1000 $2.77126 10000 $2.77126	Buy Now
	100B241JT200XT1K	Reel	7,000		1,000	1 - 10 - 100 - 1000 $2.385 10000 $2.385	Buy Now
Kyocera AVX Components 100B2R7BW500XT1K CAP CER 2.7PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B2R7BW500XT1K	Cut Tape	3,012		1	1 $6.18 10 $4.215 100 $3.1678 1000 $2.74204 10000 $2.74204	Buy Now
	100B2R7BW500XT1K	Digi-Reel	3,012		1	1 $6.18 10 $4.215 100 $3.1678 1000 $2.74204 10000 $2.74204	Buy Now
Kyocera AVX Components 100B220JT500XT1K CAP CER 22PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B220JT500XT1K	Cut Tape	2,662		1	1 $7.99 10 $5.525 100 $4.2156 1000 $3.68296 10000 $3.68296	Buy Now
	100B220JT500XT1K	Digi-Reel	2,662		1	1 $7.99 10 $5.525 100 $4.2156 1000 $3.68296 10000 $3.68296	Buy Now
	100B220JT500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.48698 10000 $3.48698	Buy Now
Kyocera AVX Components 100B240FT500XT1K CAP CER 24PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B240FT500XT1K	Digi-Reel	2,464		1	1 $14.58 10 $10.451 100 $8.2501 1000 $7.35412 10000 $7.35412	Buy Now
	100B240FT500XT1K	Cut Tape	2,464		1	1 $14.58 10 $10.451 100 $8.2501 1000 $7.35412 10000 $7.35412	Buy Now
	100B240FT500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $7.01336 10000 $7.01336	Buy Now
Kyocera AVX Components 100B221JT200XT1K CAP CER 220PF 200V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B221JT200XT1K	Cut Tape	894		1	1 $9.42 10 $6.576 100 $5.0634 1000 $4.44778 10000 $4.44778	Buy Now
	100B221JT200XT1K	Digi-Reel	894		1	1 $9.42 10 $6.576 100 $5.0634 1000 $4.44778 10000 $4.44778	Buy Now

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100B2 Datasheets (121)

Part	Manufacturer	Description	Datasheet Type	PDF
100B20	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
100B-2002	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002	Pulse Electronics	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002F	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002FNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF
100B-2002FNLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR RPB	Original	PDF
100B-2002FT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002FX	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002FXNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF
100B-2002FXNLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR RPB	Original	PDF
100B-2002FXT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NL	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NL	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002NLT	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF

100B-2002NLT	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002T	iNRCORE	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002T	Pulse Electronics	MDL DUAL 100D 1:1 SMT TR PBC	Original	PDF
100B-2002X	iNRCORE	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002X	Pulse Electronics	MDL DUAL 100D 1:1 SMT TU PBC	Original	PDF
100B-2002XNL	iNRCORE	MDL DUAL 100D 1:1 SMT TU RPB	Original	PDF

...

100B2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 100B20F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage2.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0	Original	PDF	100B20F Current100m Time300n Current20u StyleAxial-97
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
150D105 CAPACITOR Abstract: 150D823 035A2 020A2 125A2 050A2 006A2 125B2 150D683 Text: 150D www.vishay.com Vishay Sprague Solid-Electrolyte TANTALEX Capacitors, Hermetically-Sealed, Axial-Lead FEATURES • Terminations: Tin/lead SnPb , 100 % tin (RoHS compliant) • These high performance, hermetically-sealed TANTALEX® capacitors have set the standard	Original	PDF	M39003/01 CSR13) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 150D105 CAPACITOR 150D823 035A2 020A2 125A2 050A2 006A2 125B2 150D683
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
Untitled Abstract: No abstract text available Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350 H OCL with 8mA bias Operating and storage temperature: 100B-2002F: -40°C to +85°C 100B-2002FX: -55°C to +125°C Encapsulated package withstands	Original	PDF	10/100BASE-TX 100B-2002F: 100B-2002FX: 1-100MHz 2-30MHz 100B-2002F 100B-2002FX 40MHz 50MHz 1-60MHz
Untitled Abstract: No abstract text available Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military / Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350µH OCL with 8mA bias Operating and storage temperature: 100B-2002: -40°C to +85°C 100B-2002X: -55°C to +125°C IC grade transfer-molded package withstands	Original	PDF	10/100BASE-TX 100B-2002: 100B-2002X: 100B-2002 100B-2002X
RM73B2B Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	PDF	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
Untitled Abstract: No abstract text available Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION	Original	PDF	MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW
j340 motorola make Abstract: MRF21085 Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
rf push pull mosfet power amplifier Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450
mrf5s21090 Abstract: No abstract text available Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090
100B471JP200X Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X
VS100B-12 Abstract: VS15C-12 P-209 VS30C-5 VS150B VS50B-24 p209 Text: uutm /k VS-SERIES DENSEI-LAMBDA Single output 10W - 150W Model name VS 100B-24 I Rated Output Voltage Output Wattage Series Name PC Board Type Power Supply • Features C • € marking Low Voltage Directive • Input: 100V A C (85~132V AC) • Single O utput:10W ,15W ,30W ,50W ,75W ,100W ,150W	OCR Scan	PDF	100B-24 100VAC -132VAC 175VDC VS10C-VS10QB -10oC~ VS100B VS150B MAW-1205-22 VS100B-12 VS15C-12 P-209 VS30C-5 VS150B VS50B-24 p209
Untitled Abstract: No abstract text available Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS	OCR Scan	PDF	SD2900 SD2900 1021498C 1010936C

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Kyocera AVX Components 100B241JT200XT1K

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Kyocera AVX Components 100B221JT200XT1K

100B2 Datasheets (121)

100B2 Datasheets Context Search

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TH 2190 HOT Transistor

150D105 CAPACITOR

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100B0R1BW

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RM73B2B

330 j73 Tantalum Capacitor

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MRF21085

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100B0R5BW

j340 motorola make

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rf push pull mosfet power amplifier

C8450

mrf5s21090

100B471JP200X

VS100B-12

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