MRF21085LR3 Search Results

MRF21085LR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF21085LR3		Freescale Semiconductor	RF Power Field Effect Transistors		Original	PDF

MRF21085LR3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085
MRF21085LR3 Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 8, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085--1 MRF21085LR3
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF21085 MRF21085LR3
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085--2 MRF21085LSR3 MRF21085