08F45 Search Results

igct abb

Abstract: IGCT thyristor ABB gct thyristor IGCT thyristor HFBR-2528 IGCT thyristor current max IGCT
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT thyristor ABB

Abstract: IGCT abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

hp 2800 diode

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 PRELIMINARY Doc. No. 5SYA1223-03 Feb. 99 • • • • • • • • Features Direct fiber optic control

IGCT thyristor ABB

Abstract: high power igct abb 5SHX 08F4502 abb cs 400
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

5SDF08F4505

Abstract: PULSE16
Contextual Info: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

KA DIODE

Abstract: 5SPR 08F4500 08F45
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 Doc. No. 5SYA 14PP-01 Oct. 01 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications

5SPR 08F4500

Abstract: 08F4500 08F45
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0 V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications Very high di/dt capability

IGCT thyristor ABB

Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

IGCT thyristor ABB

Abstract: IGCT
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

5SDF 08F4505

Abstract: abb S 08f45
Contextual Info: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

08F45

Abstract: 5SPY 08F4500 GATE DRIVER ABB
Contextual Info: VDRM VRRM IPULSE VDcmax = 4.5 kV = 18 V = 30 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPY 08F4500 • • • • • • • • • Features Asymmetric Design For single or repetitive pulse applications Very high di/dt capability

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ABB GTO

Abstract: stud type diodes fjs 500
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.

0a214

Abstract: 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH
Contextual Info: TMS320 DSP Number 84E DESIGNER’S NOTEBOOK Speech data for Spanish LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get Spanish speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts ?

5SGS 16H4500

Abstract: CS 23-06 thyristor
Contextual Info: 5SGS 16H4500  5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600

ABB Typ RGC

Abstract: 5SGS12F4500
Contextual Info: 5SGS 12F4500 5SGS 12F4500 Old part no. TG 918-1200-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 200 I TAVm = 442 I TSM = 7 600

R2501

Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches

05D2500

Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

5SDD71B0200

Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.

CS 23-06 thyristor

Contextual Info: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600 I TSM = 12 000