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    VT115 Price and Stock

    Panduit Corp PVT-1151

    TAG 5.75"X3.25" RED/BLACK/WHITE
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    nVent PVT11500R

    SPD 1.5KV MCOV 1 POLE
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    DigiKey PVT11500R 5
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    Newark PVT11500R Bulk 1
    • 1 $573.87
    • 10 $536.24
    • 100 $467.25
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    Amphenol PCD ELVT11500

    TERM BLOCK PLUG 11POS 3.81MM
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    DigiKey ELVT11500 Tray 100
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    Interstate Connecting Components ELVT11500
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    Amphenol PCD ELVT11500E

    .150"/3.81MM STRAIGHT PLUG TOP E
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    DigiKey ELVT11500E Tray 100
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    Interstate Connecting Components ELVT11500E
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    Maxim Integrated Products VT1156MFQX

    IC REG
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    VT115 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VT-115 V-Infinity Original PDF

    VT115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGCT thyristor ABB

    Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 06F6010 5SYA1222-05 CH-5600 IGCT thyristor ABB igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max

    press pack thyristor 8000 VDRM

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 20Q8500 5SYA1073-01 20Q850mechanical CH-5600 press pack thyristor 8000 VDRM

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-03 Jan. 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


    Original     		PDF 20N8500 5SYA1072-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-04 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


    Original     		PDF 20N8500 5SYA1072-04 CH-5600

    5STP20Q8500

    Abstract: 20Q8500 vt115 ch 8500 abb phase control thyristors
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability


    Original     		PDF 20Q8500 5SYA1073-01 20Q8500 CH-5600 5STP20Q8500 vt115 ch 8500 abb phase control thyristors

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-03 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability


    Original     		PDF 20Q8500 5SYA1073-03 CH-5600

    CEM-1 20Z

    Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al
    Text: V T- 11 5 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 8 8 ~ 1 3 2 VA C , 11 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST


    Original     		PDF 80mVp-p 230VAC CTc31 KBJ406G 4AL/250V TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al

    IGCT thyristor ABB

    Abstract: MTA-156 IGCT 5szk A115 B115 HFBR-1528 HFBR-2528 VT115 IGCT thyristor current max
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 1100 8.8x103 1.65 1.2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4510 PRELIMINARY Doc. No. 5SYA1227-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 14H4510 5SYA1227-05 CH-5600 IGCT thyristor ABB MTA-156 IGCT 5szk A115 B115 HFBR-1528 HFBR-2528 VT115 IGCT thyristor current max

    IGCT thyristor ABB

    Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 08F4510 5SYA1223-06 CH-5600 IGCT thyristor ABB IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD

    IGCT thyristor ABB

    Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 10H6010 5SYA1226-05 CH-5600 IGCT thyristor ABB HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-02 Jan.13 • Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability


    Original     		PDF 20Q8500 5SYA1073-02 CH-5600

    5STP20N8500

    Abstract: 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 20N8500 5SYA1072-02 20N85echanical CH-5600 5STP20N8500 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor

    abb phase control thyristors

    Abstract: 5STP20N8500
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 20N8500 5SYA1072-02 20N85chanical CH-5600 abb phase control thyristors 5STP20N8500

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


    OCR Scan     		PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram