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    ams OSRAM Group KW-CULNM1.TG-8P4-EBXD46EBZB46-65G5-S-ZKW

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    DigiKey KW-CULNM1.TG-8P4-EBXD46EBZB46-65G5-S-ZKW Reel
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    Aimtec AM60U-2415SZ-K

    Module DC-DC 1-OUT 15V 4A 60W Bulk - Rail/Tube (Alt: AM60U-2415SZ-K)
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    Avnet Americas AM60U-2415SZ-K Tube 18 Weeks 5
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    Newark AM60U-2415SZ-K Bulk 5
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    Symmetry Electronics AM60U-2415SZ-K 1
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    Aimtec AM40E-2405SZ-K

    Module DC-DC 1-OUT 5V 8A 40W Bulk - Rail/Tube (Alt: AM40E-2405SZ-K)
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    Avnet Americas AM40E-2405SZ-K Tube 18 Weeks 10
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    Aimtec AM40UW-2405SZ-K

    Module DC-DC 1-OUT 5V 8A 40W Bulk - Rail/Tube (Alt: AM40UW-2405SZ-K)
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    Aimtec AM30K-4815SZ-K

    Module DC-DC 1-OUT 15V 2A 30W Bulk - Rail/Tube (Alt: AM30K-4815SZ-K)
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    Avnet Americas AM30K-4815SZ-K Tube 18 Weeks 5
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    5SZK Datasheets Context Search

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    5SLA 3600E170300

    Abstract: 5SYA2039 3600E170300
    Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 3600E170300 C9113 CH-5600 5SLA 3600E170300 5SYA2039

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G330100 5SYA1563-00 CH-5600

    GTO ABB 5SGA 2046

    Abstract: IG 2200 19
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 5SYA1204-04 CH-5600 GTO ABB 5SGA 2046 IG 2200 19

    IGCT thyristor ABB

    Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 06F6010 5SYA1222-05 CH-5600 IGCT thyristor ABB igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max

    5SLD0650J450300

    Abstract: No abstract text available
    Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600 5SLD0650J450300

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
    Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3


    Original     		PDF CH-5600 5SYA2053-02 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation

    5SYA2042

    Abstract: 5SNA0400J650100
    Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal


    Original     		PDF 0400J650100 CH-5600 5SYA2042 5SNA0400J650100

    abb phase control thyristors

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 65x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-06 Nov. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications


    Original     		PDF 26N6500 5SYA1001-06 26N6500 CH-5600 abb phase control thyristors

    5SNA1200G450300

    Abstract: 1200G450300 cosmi
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G450300 CH-5600 5SNA1200G450300 1200G450300 cosmi

    IC 7400 configuration

    Abstract: 5SNA1200G450300
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G450300 CH-5600 IC 7400 configuration 5SNA1200G450300

    5STP03D6500

    Abstract: 5stp 03d6500
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 380 A = 600 A = 4.5x103 A = 1.2 V = 2.3 mΩ Phase Control Thyristor 5STP 03D6500 Doc. No. 5SYA1055-02 June 09 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 03D6500 5SYA1055-02 03D6500 CH-5600 5STP03D6500 5stp 03d6500

    abb phase control thyristors

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 3875 A = 6090 A = 55x103 A = 1.03 V = 0.16 mΩ Phase Control Thyristor 5STP 34Q5200 Doc. No. 5SYA1052-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 34Q5200 5SYA1052-02 34Q5200 CH-5600 abb phase control thyristors

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1


    Original     		PDF 38H5000 5SYA1177-00 CH-5600

    cosmi

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1407-05 06-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1500E330305 CH-5600 1500N330305 cosmi

    IC 7400 configuration

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-03 Apr 12 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600 IC 7400 configuration

    IGCT thyristor ABB

    Abstract: high power igct abb agilent 5SZK 9107 Specification
    Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 06 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 26L4510 5SYA1230-02 CH-5600 IGCT thyristor ABB high power igct abb agilent 5SZK 9107 Specification

    5SNA1000G450300

    Abstract: cosmi 5SNA 1000G450300
    Text: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1000G450300 CH-5600 5SNA1000G450300 cosmi 5SNA 1000G450300

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 0250P330305 CH-5600 0250P330305

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 3600E170300 CH-5600

    5STP08G6500

    Abstract: abb phase control thyristors
    Text: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 720 A = 1140 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-05 Aug 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


    Original     		PDF 08G6500 5SYA1006-05 08G6500 CH-5600 5STP08G6500 abb phase control thyristors

    Untitled

    Abstract: No abstract text available
    Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-01 May 08 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 3170 A = 4980 A = 52x103 A = 0.97 V = 0.158 mΩ Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA1009-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 28L4200 5SYA1009-04 28L4200 CH-5600

    5SLD0650J450300

    Abstract: Abb diode ABB Switzerland
    Text: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600 5SLD0650J450300 Abb diode ABB Switzerland

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 3600 A = 5650 A = 55x103 A = 1.03 V = 0.16 mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 34N5200 5SYA1002-04 34N5200 CH-5600