igct abb
Abstract: IGCT thyristor ABB gct thyristor IGCT thyristor HFBR-2528 IGCT thyristor current max IGCT
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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cosmi1223-04
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igct abb
IGCT thyristor ABB
gct thyristor
IGCT thyristor
HFBR-2528
IGCT thyristor current max
IGCT
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IGCT thyristor ABB
Abstract: IGCT abb
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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IGCT thyristor ABB
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hp 2800 diode
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 PRELIMINARY Doc. No. 5SYA1223-03 Feb. 99 • • • • • • • • Features Direct fiber optic control
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IGCT thyristor ABB
Abstract: high power igct abb 5SHX 08F4502 abb cs 400
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs
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IGCT thyristor ABB
high power igct abb
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abb cs 400
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IGCT thyristor ABB
Abstract: IGCT
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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