K4S560832E
Abstract: K4S561632E
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004
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128MB,
256MB,
512MB
144pin
256Mb
64-bit
K4S560832E
K4S561632E
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K4S281632F
Abstract: m464s1724f K4S281632
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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PDF
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128MB
144pin
64-bit
M464S0924FT59
8Mx16
K4S281632F
m464s1724f
K4S281632
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m464s64* samsung
Abstract: K4S560832E K4S561632E
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004
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Original
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PDF
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128MB,
256MB,
512MB
144pin
256Mb
64-bit
m464s64* samsung
K4S560832E
K4S561632E
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004
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PDF
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128MB
144pin
64-bit
M464S0924FTS-C
M464S1724FTS-C
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Untitled
Abstract: No abstract text available
Text: KMM464S924AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM464S924AT1
PC100
8Mx16
KM416S8030AT
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Untitled
Abstract: No abstract text available
Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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Original
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PDF
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256MB,
512MB
144pin
64-bit
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.0 January. 2004 Rev. 1.0 January. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 0.0 December, 2003 - First release
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PDF
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128MB
144pin
64-bit
M464S0924FTS-C
8Mx16
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M464S0924MT1-L1H
Abstract: No abstract text available
Text: M464S0924MT1 PC100 SODIMM M464S0924MT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924MT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M464S0924MT1
PC100
M464S0924MT1
8Mx64
8Mx16,
400mil
144-pin
M464S0924MT1-L1H
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M464S1654BT2
Abstract: M464S1654BT2-L75
Text: M464S1654BT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S1654BT2 PC133 SODIMM M464S1654BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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M464S1654BT2
PC133
-PC133
M464S1654BT2
16Mx64
16Mx16
M464S1654BT2-L75
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Untitled
Abstract: No abstract text available
Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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M464S1654BT1
-PC133
PC133
M464S1654BT1
16Mx64
16Mx16
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K4S281632F
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 64MB, 128MB Unbuffered SODIMM
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PDF
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128MB
144pin
64-bit
8Mx16
K4S281632F
K4S281632F
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Untitled
Abstract: No abstract text available
Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD
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M464S1654BT1
PC133
-PC133
M464S1654BT1
16Mx64
16Mx16
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M464S0924CT1
Abstract: M464S0924CT1-L1H M464S0924CT1-L1L
Text: M464S0924CT1 PC100 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924CT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M464S0924CT1
PC100
M464S0924CT1
8Mx64
8Mx16,
400mil
144-pin
M464S0924CT1-L1H
M464S0924CT1-L1L
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m464s16* samsung
Abstract: K4S561632E K4S560832E 0603CAP K4S56163
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.1 September, 2003 Rev. 1.1 September, 2003 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 June, 2003
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PDF
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128MB,
256MB,
512MB
144pin
256Mb
64-bit
m464s16* samsung
K4S561632E
K4S560832E
0603CAP
K4S56163
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KMM464S924
Abstract: No abstract text available
Text: KMM464S924BT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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Original
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PDF
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KMM464S924BT1
PC100
8Mx16
KM416S8030BT
KMM464S924
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release
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PDF
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128MB
144pin
64-bit
M464S0924ETS-C
M464S1724ETS-C
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Untitled
Abstract: No abstract text available
Text: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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M464S0924BT1
PC133
-PC133
M464S0924BT1
8Mx64
8Mx16,
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K4S281632E
Abstract: No abstract text available
Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.4 March. 2004 Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 November, 2002 - First release
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Original
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PDF
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128MB
144pin
64-bit
M464S0924ETS-C
8Mx16
K4S281632E
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M464S0924CT1
Abstract: No abstract text available
Text: M464S0924CT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S0924CT1 PC133 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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Original
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PDF
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M464S0924CT1
PC133
-PC133
M464S0924CT1
8Mx64
8Mx16,
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Untitled
Abstract: No abstract text available
Text: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M464S0924ETS
M464S0924ETS
PC133
8Mx64
8Mx16,
M464S0924DTE
400mil
144-pin
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K4S511632B
Abstract: M464S3354BTS-C
Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004
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Original
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PDF
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256MB,
512MB
144pin
64-bit
K4S511632B
M464S3354BTS-C
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i 3005-2
Abstract: SO-DIMM 144-pin gls 126 VM466S924
Text: Product Specifications PART NO: VL466S924-GAS/GHS/GLS REV: 1.4 General Information 64MB 8Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VM466S924 is a 8M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 4 CMOS 8Mx16 bits with 4banks Synchronous DRAMsin TSOP-II400mil packages and a
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VL466S924-GAS/GHS/GLS
8Mx64
PC100/PC133
144-PIN
VM466S924
8Mx16
TSOP-II400mil
144-pin
DQ0-DQ63
KE024
i 3005-2
SO-DIMM 144-pin
gls 126
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M464S0924BT1
Abstract: M464S0924BT1-L75
Text: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Rev. 0 Oct. 1999 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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PDF
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M464S0924BT1
PC133
-PC133
M464S0924BT1
8Mx64
8Mx16,
M464S0924BT1-L75
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M464S0924CT2-L75
Abstract: M464S0924CT2
Text: M464S0924CT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S0924CT2 PC133 SODIMM M464S0924CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
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M464S0924CT2
PC133
-PC133
M464S0924CT2
8Mx64
8Mx16,
M464S0924CT2-L75
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