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Samsung Semiconductor K4S511632BUC75 512MB B-DIE SDRAM Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54
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K4S511632B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S511632B-CL75		Samsung Electronics	512Mb B-die SDRAM Specification		Original	PDF
K4S511632B-TC75		Samsung Electronics	512Mb B-die SDRAM Specification		Original	PDF
K4S511632B-TCL75		Samsung Electronics	512Mb B-die SDRAM Specification		Original	PDF
K4S511632B-UC75		Samsung Electronics	512Mb B-die SDRAM Specification		Original	PDF

K4S511632B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4S511632B-TC75 Abstract: M464S6554BTS-C7A "at command" Samsung K4S511632 Text: SERIAL PRESENCE DETECT M464S6554BTS-C7A Organization :64Mx64 Composition :32M x 16* 8ea Used component part # :K4S511632B-TC75 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms Contents : Byte #	Original	PDF	M464S6554BTS-C7A 64Mx64 K4S511632B-TC75 1250mil 8K/64ms 128bytes 100MHz 100MHz K4S511632B-TC75 M464S6554BTS-C7A "at command" Samsung K4S511632
K4S511632B-TC75 Abstract: M464S3354BTS-C7A intel date code format Text: SERIAL PRESENCE DETECT M464S3354BTS-C7A Organization :32Mx64 Composition :32M x 16* 4ea Used component part # :K4S511632B-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1250mil height & single sided Refresh :8K/64ms Contents : Byte #	Original	PDF	M464S3354BTS-C7A 32Mx64 K4S511632B-TC75 1250mil 8K/64ms 128bytes 100MHz 100MHz K4S511632B-TC75 M464S3354BTS-C7A intel date code format
54-TSOP Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004	Original	PDF	256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Untitled Abstract: No abstract text available Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004	Original	PDF	256MB, 512MB 144pin 64-bit
Samsung 16M SDRAM B-die Abstract: K4S510432B-TC K4S511632B Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History	Original	PDF	512Mb 16Bit A10/AP Samsung 16M SDRAM B-die K4S510432B-TC K4S511632B
K4S511632B-UC75 Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC Text: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004	Original	PDF	512Mb 16Bit A10/AP K4S511632B-UC75 K4S511632B-UL75 K4S511632B K4S510432B-UC
hynix hy57v281620 Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C Text: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors	Original	PDF	UM10208 LPC2880/LPC2888 LPC2880, LPC2888, LPC288x, 32-bit, LPC288x UM10208 hynix hy57v281620 HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
K4S511632B Abstract: M464S3354BTS-C Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004	Original	PDF	256MB, 512MB 144pin 64-bit K4S511632B M464S3354BTS-C
K4S511632B Abstract: K4S510432B-TC Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM	Original	PDF	512Mb 16Bit A10/AP K4S511632B K4S510432B-TC