05APR10 Search Results

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1499DH

Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3
Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b

Contextual Info: SPICE Device Model SiA911EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si1926DL-T1-GE3

Abstract: SI1926DL-T1-E3
Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

IRFB20N50K

Abstract: SiHFB20N50K SiHFB20N50K-E3
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

si1965

Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a

SI7454CDP-T1-GE3

Abstract: Si7454CDP
Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0305 at VGS = 10 V 22 VDS (V) 100 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

si1869dh-t1-ge3

Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH
Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a

Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b

SI1926DL-T1-E3

Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

XF1001-SC

Abstract: F1001-SC XF1001-SC-0G0T 0S226 S parameters of 5.8 GHz transistor XF1001
Contextual Info: DC-6.0 GHz 1.0W Packaged HFET F1001-SC April 2010 - Rev 05-Apr-10 Features Functional Block Diagram 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General Description The XF1001-SC is a high linearity Hetrojunction Field Effect

Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

DG9451

Abstract: Room 335 JESD78
Contextual Info: DG9451 Vishay Siliconix 8-Channel Multiplexer, with 0.5 pC Charge Injection DESCRIPTION FEATURES The DG9451 is a precision low voltage, single and dual supply CMOS analog 8-channel multiplexer. The DG9451 is designed to operate from a + 2.7 V to + 12 V single supply or from ± 5 V dual supplies and is fully specified

Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

V2770

Contextual Info: SPICE Device Model SiR896DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Si2323CDS

Abstract: 0749
Contextual Info: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIR876DP

Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

SIR878DP

Contextual Info: New Product SiR878DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 100 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.019 at VGS = 4.5 V 34 Qg (Typ.) 13.6 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • DC/DC Primary Side Switch

Si3932DV

Contextual Info: SPICE Device Model Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET