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    SI2323CDS Price and Stock

    Vishay Siliconix SI2323CDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2323CDS-T1-BE3 Cut Tape 8,961 1
    • 1 $0.73
    • 10 $0.45
    • 100 $0.73
    • 1000 $0.1981
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    SI2323CDS-T1-BE3 Digi-Reel 8,961 1
    • 1 $0.73
    • 10 $0.45
    • 100 $0.73
    • 1000 $0.1981
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    SI2323CDS-T1-BE3 Reel 6,000 3,000
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    New Advantage Corporation SI2323CDS-T1-BE3 6,000 1
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    Vishay Siliconix SI2323CDS-T1-GE3

    MOSFET P-CH 20V 6A SOT23-3
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    DigiKey SI2323CDS-T1-GE3 Digi-Reel 5,045 1
    • 1 $1.13
    • 10 $0.707
    • 100 $1.13
    • 1000 $0.32557
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    SI2323CDS-T1-GE3 Cut Tape 5,045 1
    • 1 $1.13
    • 10 $0.707
    • 100 $1.13
    • 1000 $0.32557
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    SI2323CDS-T1-GE3 Reel 3,000 3,000
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    Bristol Electronics SI2323CDS-T1-GE3 365
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    Chip 1 Exchange SI2323CDS-T1-GE3 15,497
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    New Advantage Corporation SI2323CDS-T1-GE3 45,000 1
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    MOSLEADER SI2323CDS-T1-GE3-ML

    P -20V 6A SOT-23
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    DigiKey SI2323CDS-T1-GE3-ML Reel 200
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    Vishay Intertechnologies SI2323CDS-T1-GE3

    Trans MOSFET P-CH 20V 4.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2323CDS-T1-GE3)
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    Avnet Americas SI2323CDS-T1-GE3 Reel 42,000 6 Weeks 3,000
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    Mouser Electronics SI2323CDS-T1-GE3 5,591
    • 1 $0.85
    • 10 $0.585
    • 100 $0.435
    • 1000 $0.306
    • 10000 $0.237
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    Verical SI2323CDS-T1-GE3 36,000 3,000
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    SI2323CDS-T1-GE3 6,000 3,000
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    SI2323CDS-T1-GE3 2,845 36
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    Arrow Electronics SI2323CDS-T1-GE3 36,000 6 Weeks 3,000
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    SI2323CDS-T1-GE3 6,000 6 Weeks 3,000
    • 1 $0.1489
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    • 100 $0.1489
    • 1000 $0.1489
    • 10000 $0.0725
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    SI2323CDS-T1-GE3 Cut Strips 2,845 6 Weeks 1
    • 1 $0.3402
    • 10 $0.3009
    • 100 $0.2648
    • 1000 $0.1681
    • 10000 $0.1681
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    Newark SI2323CDS-T1-GE3 Reel 42,000 3,000
    • 1 $0.226
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    SI2323CDS-T1-GE3 Bulk 38,529 1
    • 1 $0.764
    • 10 $0.668
    • 100 $0.473
    • 1000 $0.402
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    TTI SI2323CDS-T1-GE3 Reel 15,000 3,000
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    TME SI2323CDS-T1-GE3 1,871 1
    • 1 $0.673
    • 10 $0.575
    • 100 $0.423
    • 1000 $0.301
    • 10000 $0.218
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    Chip 1 Exchange SI2323CDS-T1-GE3 15,600
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    Avnet Asia SI2323CDS-T1-GE3 23 Weeks 3,000
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    EBV Elektronik SI2323CDS-T1-GE3 22 Weeks 3,000
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    Wuhan P&S SI2323CDS-T1-GE3 3,000 1
    • 1 $2.91
    • 10 $2.91
    • 100 $0.97
    • 1000 $0.88
    • 10000 $0.88
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    Vishay Intertechnologies SI2323CDS-T1-BE3

    Transistor MOSFET P-CH 20V 6A 3-Pin SOT-23 - Tape and Reel (Alt: SI2323CDS-T1-BE3)
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    Avnet Americas SI2323CDS-T1-BE3 Reel 30,000 18 Weeks 3,000
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    Mouser Electronics SI2323CDS-T1-BE3 14,864
    • 1 $0.6
    • 10 $0.422
    • 100 $0.279
    • 1000 $0.228
    • 10000 $0.228
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    Verical SI2323CDS-T1-BE3 15,000 3,000
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    • 10000 $0.1517
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    Arrow Electronics SI2323CDS-T1-BE3 15,000 18 Weeks 3,000
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    • 10000 $0.1517
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    Newark SI2323CDS-T1-BE3 Bulk 3,000
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    • 10000 $0.261
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    TTI SI2323CDS-T1-BE3 Reel 72,000 3,000
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    • 10000 $0.169
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    SI2323CDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2323CDS-T1-BE3 Vishay Siliconix P-CHANNEL 20-V (D-S) MOSFET Original PDF
    SI2323CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A SOT-23 Original PDF

    SI2323CDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch


    Original     		PDF Si2323CDS O-236 OT-23) Si2323CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2323CDS

    Abstract: 0749
    Text: SPICE Device Model Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2323CDS 18-Jul-08 0749

    Si2323CDS

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2323CDS 2002/95/EC O-236 OT-23) Si2323CDS-T1-GE3 18-Jul-08

    SI2323DS-T1-E3

    Abstract: Si2323CDS Si2323DS si2323cdst1ge3 Si2323DS-T1-GE3 Si2323DS-T1
    Text: Specification Comparison Vishay Siliconix Si2323CDS vs. Si2323DS Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2323CDS-T1-GE3 replaces Si2323DS-T1-GE3 Si2323CDS-T1-GE3 replaces Si2323DS-T1-E3 Si2323CDS-T1-GE3 replaces Si2323DS-T1


    Original     		PDF Si2323CDS Si2323DS OT-23 Si2323CDS-T1-GE3 Si2323DS-T1-GE3 Si2323DS-T1-E3 Si2323DS-T1 si2323cdst1ge3

    Si2323CDS

    Abstract: 5218 AN609
    Text: Si2323CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2323CDS AN609, 15-Jan-10 5218 AN609

    Untitled

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2323CDS 2002/95/EC O-236 OT-23) Si2323CDS-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2323CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2323CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836