SI3932DV Search Results

AN609

Abstract: Si3932DV si3932
Contextual Info: Si3932DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

marking CODE MH

Abstract: Si3932DV si3932 0642 SI3932DV-T1-GE3
Contextual Info: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3932DV

Contextual Info: SPICE Device Model Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si3932dv

Contextual Info: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®