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    Vishay Siliconix SIR876DP-T1-GE3

    MOSFET N-CH 100V 40A PPAK SO-8
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    Vishay Intertechnologies SIR876DPT1GE3

    N-CHANNEL 100 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 100V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIR876DPT1GE3 13
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    SIR876DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR876DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A 8-SOIC Original PDF

    SIR876DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN609

    Abstract: SiR876DP 2038
    Text: SiR876DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR876DP AN609, 12-Mar-10 AN609 2038 PDF

    SIR876DP

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 18-Jul-08 PDF

    SIR876DP

    Abstract: 1083
    Text: SPICE Device Model SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR876DP 18-Jul-08 1083 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		SiR876DP 2002/95/EC SiR876DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF