GRM1555C1H220J
Abstract: MABAES0029 MAX2043 MAX2043ETX MAX2043EVKIT
Text: 19-0570; Rev 0; 5/06 MAX2043 Evaluation Kit The MAX2043 evaluation kit EV kit simplifies the evaluation of the MAX2043 UMTS/WCDMA, DCS, PCS, and WiMAX base-station up/downconversion mixer. It is fully assembled and tested at the factory. Standard 50Ω SMA connectors are included on the EV kit’s input and
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MAX2043
MAX2043
GRM1555C1H220J
MABAES0029
MAX2043ETX
MAX2043EVKIT
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Untitled
Abstract: No abstract text available
Text: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers
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D-74532
D-38875
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smd diode 708
Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed
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BAT93
SCD24
smd diode 708
SMD M1B diode
M1B Diode smd
CD 4938
Silicon Schottky Diode sod123
SMD M1B
str 541
BAT93
SCD24
ir 7811
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4245
Abstract: SMD M1B BAT56 SMD M1B diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current
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BAT56
SCD24
4245
SMD M1B
BAT56
SMD M1B diode
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Untitled
Abstract: No abstract text available
Text: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±
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MTP2N80
O-220)
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Untitled
Abstract: No abstract text available
Text: r n THIS bftttWNC IS UWNJ6USHBT" RELEASED FM PiAUCAtWN c COPYW OHT - _ BY TYCO ELECTRONCS IOC WST R E V IS IO N S ALL ROUTS RESERVED. B 1 1APR200B R EV P E R ECO —0 8 —0 0 8 1 5 4 A MATERIALS: HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0.
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OCR Scan
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1APR200B
C26800
100jj
MAG45
3HMR2000
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BYS 045
Abstract: SCHOTTKY bys 50 BYS 045 v 75
Text: LB G A G rlB B SCHOTTKY DIODES RRM V Type <0.5 <0.5 <0.5 125 125 125 40 50 60 70 80 90 100 1.0 1.0 1.0 1.0 1.0 1.0 1.0 40 40 40 40 40 40 40' <0.70 <0.70 <0.70 <0.80 <0.80 <0.80 <0.80 1.0 1.0 1.0 1.0 1.0 1.0 1.0 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 150 150
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DO-15
DO-201
O-220
T0Q4S24
BYS 045
SCHOTTKY bys 50
BYS 045 v 75
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eye response curve
Abstract: S250-DO S250 smd lg diode diode s250 diode LR smd Q62703-Q1539 TA 7503 Q62703-Q1516 Q62703-Q1517
Text: L Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-J f SIEMENS AKTIEN6ESELLSCHAF LED s-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards
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18-cm-reel
E-7502
33-cm-reel
E-7503
S250-DO
S250-D0
0LYS25O-DO
S250-D0
Q62703-Q1539
eye response curve
S250
smd lg diode
diode s250
diode LR smd
TA 7503
Q62703-Q1516
Q62703-Q1517
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smd lg diode
Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Text: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards
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OCR Scan
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001feilST
33-cm-reel
18-cm-reel
E-7502
S250-DO
S250-D0
S25D-DO
Q62703-Q1539
smd lg diode
Q62703Q1640
Q62703-Q1608
diodes siemens
Q62703-Q1657
smd code LR
S25000
diode s250
S250
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BZW08
Abstract: B2W06-154B B2W06-15B BZW05-33 bzwo6 bzw0628 B2W06-299B bzw05-37b ezw0620 BZW06-154
Text: TAIWAN SEMICONDUCTOR % BZW06 SERIES 600 Watts Transient Voltage Suppressor Diodes DO-15 RoHS C O M P L IA N C E 33 • - Features ❖ U L R e c o g n is e d ❖ <> <> ■> ■> F i l e it E - 5 G Q 0 5 r ia s lic package has Unde w rite rs Laboratory Flam m ability C lassification S 4V 0
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BZW06
DO-15
E-5GQ05
MIL-STD-19500
BZW06-154
B2W06-154B
BZW06-171
BZW06-171B
BZW06-188B
BZW06-213
BZW08
B2W06-15B
BZW05-33
bzwo6
bzw0628
B2W06-299B
bzw05-37b
ezw0620
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BUT51P
Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS
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t3fci72S4
BUT51Pdarlington
BUT51P
340D-01
O-218
R339
BUT51
NPN POWER DARLINGTON TRANSISTORS
I960
free ic 339
motorola darlington power transistor
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C1359
Abstract: MJH16018 K2603 C26CH 340E-01 147J tg-500 175C MUR30100E dl 0165
Text: MOTOROLA SC DIODES/OPTO O rder this data sheet by M UR301 ODE/D b3b?555 0001311= 2 5SE D MOTOROLA V -Z 3 -0 7 I SEMICONDUCTOR TECHNICAL DATA M UR30100E S w itc h m o d e P o w e r R e c tifie r TM . . . designed for use in switching power supplies, inverters and as freewheeling diodes,
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MUR3010DE/D
MUR30100E
O-218
2513JR
CJ359Â
C1359
MJH16018
K2603
C26CH
340E-01
147J
tg-500
175C
MUR30100E
dl 0165
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diode U3j
Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Text: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high
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IRF530
IRF531
IRF532
IRF533
O-220)
diode U3j
IRf 447 MOSFET
1RF530
1rf5305
a7x transistor
MOSFET IRF 531
motorola diode u3j
aaBO
ON U3J
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plumbicon
Abstract: display dc05 display Vidicon 4806 PHILIPS WIDEBAND HYBRID IC MODULES IC12 Peripherals data handbook Philips Varistors
Text: Philips Semiconductors Data Communications Products Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete S em iconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly.
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T39 diode
Abstract: No abstract text available
Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,
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3b7254
IRFZ34/D
C65M2
IRFZ34
T39 diode
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PDF
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2N6122 transistor
Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Text: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —
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b3b7254
2N6121,
2N6123
2N6124,
2N6125
2N6121
2N6124
2N6122
2N612S
2N6122 transistor
2n6123
2N6I24
2N61
2N6126
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PDF
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MTP8N20
Abstract: MTM8N20 221A-06 25CC
Text: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,
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OCR Scan
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bBb72S4
MTM8N20
MTP8N20
b3b7B54
MTP8N20
221A-06
25CC
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PDF
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SO47
Abstract: BSAU151 ZC700 ZC775 regulator 0-12 v AU151
Text: LUCAS S T A B I L I T Y ELEK LTD SbG7D13 0D0G07fci S « L U C B 81C 00076 D fll 100W SILICO N D IFFU S E D JU N CTIO N VO LTAGE REGU LATO RS J 8.2-10 0 V BREAKDOWN VO LTA G ES ZC700 SERIES The ZC700 series voltage regulators are case rated, silicon diffused junction stud-mounted
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OCR Scan
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SbG7013
D00G07b
ZC700
SO-47
AU151
SO47
BSAU151
ZC775
regulator 0-12 v
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PDF
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T 3512 H diode
Abstract: BU323P BU323AP diode led rojo diode T 3512 H a72S4 Lc 3362 M 3329 B1
Text: MOTORCLA SC XSTRS/R F ÎE E D I L3fc.?aS4 MOTOROLA T he BU323P, BU323APare m onolithic darlington transistors designed for autom otive ignition, switching regulator and m otor control applications. DARLINGTON NPN SILICON POWER TRANSISTORS 350 & 400 VOLTS 125 WATTS
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BU323P
BU323AP
BU323P,
BU323APare
BU323AP)
BU323AP
359VlBU323P;
VI6U323AP)
T 3512 H diode
diode led rojo
diode T 3512 H
a72S4
Lc 3362
M 3329 B1
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 B U Z71A P o w er Field E ffe c t T ransistor N-Channel Enhancement-Mode Silicon Gate These TM O S III P ow er FETs are designed fo r lo w v o lta g e , high speed, lo w loss p o w e r sw itch in g a p p li ca tion s such as sw itch in g regu la to rs, converters,
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BUZ71
BUZ71,
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PDF
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BOX34C
Abstract: Transistors bd 133 BOX34B X33C 3B33C 750 V dc 100 amp GTO X33A bd 1382 semiconductor BDX33 bd 139 package
Text: m o to ro la sc x s trs /r 12E D I f b3t7SSM 000477=1 T | 7-33-29 • 7 ^ 3 3 -3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLIN GTO N COM PLEMENTARY SILICO N POWER TRANSISTORS . designed fo r geneial purpose and low speed NPN PMP BDX33 B0X33A BDX33B BDX33C
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OCR Scan
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BDX33C.
BDX33
B0X33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33,
BOX34C
Transistors bd 133
BOX34B
X33C
3B33C
750 V dc 100 amp GTO
X33A
bd 1382 semiconductor
bd 139 package
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION S O N E T/S D H /A TM C LO C K R ECOVERY UNIT FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop filter for clock recovery
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OCR Scan
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S3027
OC-12/STM-4
350mW
S3027
speed0-700
500mV
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SO N E T /SD H /AT M C L O C K R ECOVERY UNIT FEATURES S3027 GENERAL DESCRIPTION • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop
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OCR Scan
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S3027
OC-12/STM-4
350mW
S3027
500mV
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SO N E T /S D H /A T M C L O C K RECOVERY UNIT S3026 GENERAL DESCRIPTION FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop
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OCR Scan
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S3026
OC-12/STM-4
350mW
S3026
500mV
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PDF
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