motorola rf Power Transistor
Abstract: an555 motorola transistor handbook motorola rf power dow corning silicone compound
Text: Order this document by AN555/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN555 MOUNTING STRIPLINE-OPPOSED-EMITTER SOE TRANSISTORS Prepared by: Lou Danley INTRODUCTION The Stripline Opposed Emitter (SOE) package presently used by Motorola for a number of rf power transistors
|
Original
|
PDF
|
AN555/D
AN555
motorola rf Power Transistor
an555
motorola transistor handbook
motorola rf power
dow corning silicone compound
|
3125uS
Abstract: No abstract text available
Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal
|
Original
|
PDF
|
KM44V16004B,
KM44V16104B
16Mx4
400mil
3125uS
|
KM416V4004B
Abstract: KM416V4104B
Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal
|
Original
|
PDF
|
KM416V4004B,
KM416V4104B
16bit
4Mx16
400mil
KM416V4004B
KM416V4104B
|
KM48V8004B
Abstract: KM48V8104B
Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal
|
Original
|
PDF
|
KM48V8004B,
KM48V8104B
400mil
KM48V8004B
KM48V8104B
|
KM416C4004B
Abstract: No abstract text available
Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this
|
Original
|
PDF
|
KM416C4004B,
KM416C4104B
16bit
4Mx16
400mil
KM416C4004B
|
bgs2
Abstract: BGS3 tb 9207 5566-NB6S MOLEX mxj a2 ag52 SD-5566 je 243 08-B5 mxj A2 connector
Text: 10 co 'ST LO 4 .2 — DIM. A FIn n FI M M 6 |t QSO FIn n I4I5In n MM fl«l ,|CMM 6il16m FIn n 14II51 FIn n 14H51pin FI M 7|b M 10II1MM »il6M m T n 4 n n n MMn n MM lo) n I MM I 1? 13 IS IT 20 n n n MMFin MMn n !TI 18MM m 1 3I 14 B FIn n 14I516^ FIn n MMFin n n n MMFin 1BI31
|
OCR Scan
|
PDF
|
4I516
34/4/Zffl
SD-5566-N*
MXJ-32
bgs2
BGS3
tb 9207
5566-NB6S
MOLEX mxj a2
ag52
SD-5566
je 243
08-B5
mxj A2 connector
|
04A21
Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Text: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6
|
OCR Scan
|
PDF
|
D-5566-NA*
04A21
SD-5566
55b6
cr 6224 T
AM 22A 1043
5566S
SD5566
ru 94v0 circuit
MOLEX mxj 8A
|
DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4
KM44C4104BS
D034b64
DG34B
|
KM44C4004B
Abstract: No abstract text available
Text: 04BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4004B
KM44C4004BS
0034S12
|
KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
|
Untitled
Abstract: No abstract text available
Text: 10 s m R IB IN D IC A T E S C IR C U IT NO.I | n , U =^ I 5 47 43 39 34 30 26 10 I I Y I Z I p it c h T / 8 6 46 42 37 33 29 25 4 2 6 4 2 18 16 14 ,4 ,2 16 ,8 18 13 8 9 6 5 4 12 06 8 ,4 4 2 DIM B 22 20 ,8 06 22 2 0 T|f7] 0 z\(0 0 0 5 6 0 jlI i j 0 24 ,2 □ 0000
|
OCR Scan
|
PDF
|
08AGS-2
-04AGS-2I0
-24A-400
-22A-400
-20A-400
I8A-400
I6A-400
I4A-400
I2A-400
I0A-400
|
fu 9024
Abstract: bu 5027 yt 5188 FU 9024 N 5566-02AS-210 20A400 086s MOLEX mxj a2 5566 molex 5566-02A
Text: 10 I IY IZ I 5 47 43 39 34 30 26 22 8 3 9 5 6 4 2 8 6 4 2 8 6 4 DIM B 46 42 37 33 29 25 2 6 2 8 4 2 n 7 7] 0 5 -iJ 24 22 20 8 6 4 2 IO 8 6 4 2 8 6 4 2 8 6 4 2 DIM A 0 0 0 0 n 0 7 0 0 6 T0 00000 00000 00000000 10 CKTS. I6 CKTS. CKTS. 000000 000000 0 0 7 F ii 5 7 7 »IM
|
OCR Scan
|
PDF
|
8II91
S000000
MATE66-NAPB
-04AGS
5566-02AGS
566-02A
5566-NA
5566-NAÂ
fu 9024
bu 5027
yt 5188
FU 9024 N
5566-02AS-210
20A400
086s
MOLEX mxj a2
5566 molex
5566-02A
|
Untitled
Abstract: No abstract text available
Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM48C2004BK
16Mx4,
512Kx8)
|
Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM48C2104BK)
KM48C2104BK
7ib414E
|
|
|
Untitled
Abstract: No abstract text available
Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal
|
OCR Scan
|
PDF
|
KM416V4004B,
KM416V4104B
16bit
4Mx16
|
Untitled
Abstract: No abstract text available
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
|
OCR Scan
|
PDF
|
KM44C16004B,
KM44C16104B
16Mx4
KM44C16004B
KM44C16104B
tASC26ns,
|
A10CE
Abstract: OYNN KM48C2104B km4e KM48V2104B
Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power
|
OCR Scan
|
PDF
|
KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
A10CE
OYNN
km4e
KM48V2104B
|
KM44V4004BS
Abstract: irf ddt D0350
Text: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM44V4004BS
7Tb414B
D0350fl3
KM44V4004BS
irf ddt
D0350
|
31DQ6
Abstract: 31DQ5
Text: KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref , access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, f?AS-only refresh and Hidden refresh capabilities
|
OCR Scan
|
PDF
|
KM48C8004B,
KM48C8104B
KM48C8004B
KM48C8104B
31DQ6
31DQ5
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 6 6 F 8 0 8 4 B S1 Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££T R t»ü £S DRAM MODULE KM M 3 6 6 F 8 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • Removed two AC parameters t cacp (access time from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I C S .
|
OCR Scan
|
PDF
|
8Mx64
4Mx16
KMM366F80
KMM366F884BS1
416V4004BS
KMM366F804BS1
-KM41
|
ka 6043
Abstract: H0027 h024
Text: DIM. "A" 10 D IM . "B" .2 I 5 . 4 .17 (9.6) .54 .33 ( I5. 8) (8.4) „7 I „5 0 (I8.C0 ( I2„ 6) „87 „66 (2 2 .2 ) (16 .8) 1.0 4 .8 3 (2 6 .4 ) 1.20 (2 1. 0 ) .99 (3 0 .6 ) (2 5 „ 2 ) L57 l„ 16 (5 4 .8 ) 20 22 24 (4 . 2 ) MI_5I 6 m uz 1_1 6 CKTS.
|
OCR Scan
|
PDF
|
SD-5566-002
ka 6043
H0027
h024
|
Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM48C2104BS
|
Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
16Mx4,
512Kx8)
KM44C4104BK
7Tb4142
0G34bb2
|
Untitled
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
|
OCR Scan
|
PDF
|
KM44C4004BK
512Kx8)
7Tb414E
|
