KM416V4104B Search Results

Contextual Info: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM416V4004B

Abstract: KM416V4104B
Contextual Info: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

Contextual Info: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM416V4004B

Abstract: KM416V4104B
Contextual Info: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

4mx16 edo

Contextual Info: KM416V4Q04B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power corvsumption{Normal

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Dec. 1997) • R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KMM372F804BS

Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

KMM372F404BS

Contextual Info: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

Contextual Info: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM366F40 8 4BS1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM366F40(8)4BS1 Revision History Version 0.0 (Dec. 1997) R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.

KMM366F404BS1

Contextual Info: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits

4MX16

Abstract: KM416V4104BS
Contextual Info: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

24C02N

Contextual Info: UG44W6446HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788

KM616V4002BT-10

Abstract: PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx
Contextual Info: Утвержден ЮФКВ.469555.088РЭ-УД Модуль МЦ 4.07 Руководство по эксплуатации ЮФКВ.469555.088РЭ Инв.№ подл. Подп. и дата Взам.инв.№ Инв.№ дублл. Подп. и дата

Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.1 Nov. 1997 Rev.0.1 (Nov. 1997) ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Sept. 1997) • R e m o v e d tw o AC p a r a m e te r s t c a c p ( a c c e s s tim e fr o m CAS) a n d tA A P ( a c c e s s tim e fr o m c o l. a d d r . ) in A C CHARACTERISTICS.

Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372F404BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .

Contextual Info: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in

KM416V4104BS

Abstract: KMM372F804BS
Contextual Info: KMM372F804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6

Contextual Info: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.

KMM372F804BS

Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in