KM48V8004B Search Results

KM48V8004B

Abstract: KM48V8104B
Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

KM48V8004B

Abstract: KM48V8104B
Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

31DQ6

Contextual Info: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal

8104b

Contextual Info: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or

Contextual Info: KMM372F80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

trw 810

Contextual Info: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .

Contextual Info: KMM 372F80 8 3BK/BS DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 KMM 372F80(8)3BK/BS DRAM MODULE Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t c acp (access time from CAS) and tAAP (access time from col. addr.) in A C C H A R A C T E R IS T IC S .

Contextual Info: DRAM MODULE KMM374F80 8 3BK/BS Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F80(8)3BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM372F80 8 3BK/BS KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs

KMM372F803BK

Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
Contextual Info: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs

nk401

Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
Contextual Info: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development

KMM372F803BK

Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
Contextual Info: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs

dram module

Contextual Info: DRAM MODULE KMM 366F80 8 3BK3 8Mx64 Unbuffered DIMM (8Mx8 base) Revision 0.0 Nov. 1997 -1 - Rev. 0.0 ( Nov. 19 97) DRAM MODULE KMM 366F80(8)3BK3 Re v i s i o n H is to ry Ve rs i on 0 . 0 (N ov . 1 997 ) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F80(8)3BK to KMM366F80(8)3BK3 caused by PCB revision .

Contextual Info: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3BK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3BK2 consists of eight CMOS 8Mx8bits

Contextual Info: DRAM MODULE KMM374F80 8 3BK1 KMM374F80(8)3BK1 EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F80(8)3BK1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung