Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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OCR Scan
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32-Pin
Am28F010A
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am29f010
Abstract: No abstract text available
Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands
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OCR Scan
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Am29F010
32-pin
Am29F040
02S7S2A
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AM2BF010
Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption
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Am28F010
32-Pin
AM2BF010
28F010
TRANSISTOR TZ
am28f010-150
P5752
11559F-12
11559F-2
am28f010-200
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Untitled
Abstract: No abstract text available
Text: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation
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OCR Scan
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025752B
003423b
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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OCR Scan
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PDF
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48-pin
Am29F016
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current
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OCR Scan
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PDF
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32-Pin
Am28F020A
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AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
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OCR Scan
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PDF
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Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
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Untitled
Abstract: No abstract text available
Text: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current
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AmC004AFLKA
68-pin
G033354
1888888888888888I
7274A-21
0257S2Ã
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EE-21
Abstract: 28F010P
Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current
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OCR Scan
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PDF
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Am28F010
32-Pin
D55752fl
D3273D
EE-21
28F010P
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Untitled
Abstract: No abstract text available
Text: ADV MICRO IME MEMORY 57C401/13 57C402/23 D I □2S7S5Û ooa?ast. g 57C4033 I a dvanced Micro Devices Military CMOS Zero Power FIFOs 64x4 64x5 Memory 12 MHz Cascadable Conforms to MIL-STD-883, Class B (Latest Revision) DISTINCTIVE CHARACTERISTICS • Zero standby power
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57C401/13
57C402/23
57C4033
MIL-STD-883,
57C4013/23/33)
00272b?
Q7319B
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29f200b
Abstract: 0032M AM29 FLASH SO044
Text: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements
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OCR Scan
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PDF
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
44-pin
48-pin
29f200b
0032M
AM29 FLASH
SO044
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read
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PDF
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Am29LV004T/Am29LV004B
40-pin
Am29LV004
0S575Sf
DD34S73
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY n Am29F080 Advanced Micro Devices 8-Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Program Algorithms ■ 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements
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OCR Scan
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PDF
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Am29F080
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amd socket 940 pinout
Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to
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OCR Scan
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PDF
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Am27C020
28-pin
32-pin
8M-7/94-0
11507E
amd socket 940 pinout
SSC 9500
KSS 8006
electra 171
AMD 27C020
BXA 4250
27C020
"electronica"
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device
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02S7S2Ã
Am93L469
45-ns
Am93469
02S752A
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DG33 transistor
Abstract: No abstract text available
Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time
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OCR Scan
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PDF
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32-Pin
Am28F512A
DG33 transistor
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Untitled
Abstract: No abstract text available
Text: ADV MICRO L.4E D MEMORY • 02S7Saa 0Q321D1 ÛÛO ■ PRELIMINARY a Advanced Micro Devices A m 2 7 L V 0 1 0 /A m 2 7 L V 0 1 O B 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V
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OCR Scan
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PDF
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02S7Saa
0Q321D1
7341A-11
Am27LV010/Am27LV01
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Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase
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OCR Scan
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PDF
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Am28F256
32-pin
Am28F256-75
025752fl
DD32b01
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (battery-operated systems)
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OCR Scan
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PDF
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Am27LV020/Am27LV020B
28-pin
32-pin
Am33C93A
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29F040
Abstract: No abstract text available
Text: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards
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OCR Scan
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PDF
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Am29F040
32-pin
DD33427
TSR032
025752fl
29F040
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AM27G512-200
Abstract: AM27G
Text: ADV MI CR O MEMORY 14E D | t - q 0 E S 7 S 2 Û 0 0 2 7 3 ^ 5 fl | u i ' ? , - Q A A m 2 7 C 5 1 2 Adva£ 65,536 x 8-Bit CMOS EPROM Devices D ISTIN CTIVE CH ARACTERISTICS • • • Fast access tim e — 90 ns Low power consumption; - 1 0 0 ¡th maximum standby current
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OCR Scan
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PDF
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Am27C512
512K-bit,
WF021992
27C010
AM27G512-200
AM27G
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PEB 2261
Abstract: 0034D A03407
Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current
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OCR Scan
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PDF
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Am28F020A
32-Pin
-32-pin
PEB 2261
0034D
A03407
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY b4 E D • G2S7SSÖ 0G325QS 3 0 7 ■AM1>4 z \ Advanced Micro Devices Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed
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OCR Scan
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PDF
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0G325QS
Am27X2048
16-Bit)
KS000010
15653B-9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at
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OCR Scan
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PDF
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16-Megabit
48-pin
Am29F016
G25752A
0033DSb
TSR048
16-038-TS48
DA104
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