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    AM29F040 Price and Stock

    Infineon Technologies AG AM29F040B-70JF

    IC FLASH 4MBIT PARALLEL 32PLCC
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    DigiKey AM29F040B-70JF Tray 210
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    EBV Elektronik AM29F040B-70JF 26 Weeks 30
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    AMD AM29F040B-120JI

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    Bristol Electronics AM29F040B-120JI 914
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    AM29F040B-120JI 9
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    AMD AM29F040B-90JI

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    Bristol Electronics AM29F040B-90JI 251
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    AM29F040B-90JI 12
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    Win Source Electronics AM29F040B-90JI 900
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    AMD AM29F040B-90JD

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    Bristol Electronics AM29F040B-90JD 114
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    Win Source Electronics AM29F040B-90JD 6,470
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    AMD AM29F040B150JC

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    Bristol Electronics AM29F040B150JC 100
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    AM29F040 Datasheets (379)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Am29F040 Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F040-120/BUA Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120/BXA Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120DE Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120DEB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EC Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F040-120ECB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EE Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EEB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120EI Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F040-120EIB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120FC Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120FC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM29F040-120FCB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120FE Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120FEB Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    AM29F040-120FI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Original PDF
    ...

    AM29F040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    df1818

    Abstract: No abstract text available
    Text: WED7F325ZXE5SJ-C/A 512Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 60, 90ns ■ Commercial and Industrial Temperature Ranges ■ Based on AMD: AM29F040B-xxEC ■ 5 Volt Programming. 5V ± 10% Supply ■ Packaging ■ Low Power CMOS, 500µA Standby


    Original     		PDF WED7F325ZXE5SJ-C/A 512Kx32 AM29F040B-xxEC 64KBytes df1818

    am29f040b

    Abstract: Publication# 19957 Am29F040
    Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology


    Original     		PDF Am29F040B Am29F040 pre032 TSR032 32-Pin 16-038-TSOP-2 Publication# 19957 Am29F040

    Untitled

    Abstract: No abstract text available
    Text: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are


    Original     		PDF EDI7F33512C 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29F040 512Kx8

    am29f040b

    Abstract: No abstract text available
    Text: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29F040B

    AM29F040B-120

    Abstract: AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064
    Text: Am29F040B Data Sheet Retired Product Am29F040B Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.


    Original     		PDF Am29F040B 21445E6 AM29F040B-120 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064

    AMD Series D flash memory card

    Abstract: Am29F040 AMD marking CODE flash
    Text: PCMCIA Flash Memory Card FLC Series White Electronic Designs 1 MEGABYTE through 10 MEGABYTE AMD based FEATURES The WEDC FLC series is based on AMD Am29F040 Flash memories; the FLC04 is a direct equivalent of AMD’s AmC0XXCFLKA, however it offers wider range of


    Original     		PDF Am29F040 150ns 68-pin 64Kbyte base50ns AMD Series D flash memory card AMD marking CODE flash

    17113e

    Abstract: Am29F040 Max 17113 29F040 amd 29f040 AMD date code 29f040
    Text: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash


    Original     		PDF Am29F040 32-pin 17113e Max 17113 29F040 amd 29f040 AMD date code 29f040

    AM29F040B-55

    Abstract: AM29F040B-70 AM29F040B-90 IN3064 plcc 28 spansion Publication# 19957 Am29F040 AM29F040B am29f040b e7
    Text: Am29F040B Data Sheet Am29F040B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been


    Original     		PDF Am29F040B 21445E8 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 plcc 28 spansion Publication# 19957 Am29F040 am29f040b e7

    AM29F040B-120

    Abstract: AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 CS39S
    Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device


    Original     		PDF Am29F040B Am29F040 CS39S AM29F040B-120 AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064

    Untitled

    Abstract: No abstract text available
    Text: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.


    Original     		PDF EDI7F33512C 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29F040 512Kx8

    am29f040b

    Abstract: No abstract text available
    Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		PDF Am29F040B Am29F040

    AM29F040B

    Abstract: No abstract text available
    Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology


    OCR Scan     		PDF Am29F040B Am29F040 twHwi-12-

    Am29F040

    Abstract: 29F040 17113
    Text: CONDENSED ADVANCE INFORMATION Advanced Micro Devices Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F040 32-pin 29F040 7113A-5 7113A-6 A0-A18 17113

    AM29F040B

    Abstract: AM29F040B-70 AM29F040B-55 AM29F040B-1505
    Text: A M D tl Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically


    OCR Scan     		PDF Am29F040B Am29F040 AM29F040B-70 AM29F040B-55 AM29F040B-1505

    AM29F040A

    Abstract: 17113D-4 AMD date code 29f040 Am29F040
    Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards


    OCR Scan     		PDF Am29F040 32-pin 0257S2fl 0033bH3 AM29F040A 17113D-4 AMD date code 29f040

    29f040b

    Abstract: 29F040B70 AM29F040B
    Text: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ Embedded Algorithms — Minimizes system level power requirements — Embedded Erase algorithm automatically


    OCR Scan     		PDF Am29F040B Am29F040 29f040b 29F040B70

    AM29F040B

    Abstract: No abstract text available
    Text: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology


    OCR Scan     		PDF Am29F040B Am29F040 AM29F040B

    367 al

    Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
    Text: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams


    OCR Scan     		PDF EDI7F33512C 512KX32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29F040 367 al CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 EDI7F33512C

    17113e

    Abstract: AM29F040 amd 29f040 29F040 17113E-14
    Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash


    OCR Scan     		PDF Am29F040 32-pin 17113e amd 29f040 29F040 17113E-14

    Am29F040

    Abstract: No abstract text available
    Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands


    OCR Scan     		PDF Am29F040 32-pin

    Untitled

    Abstract: No abstract text available
    Text: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		PDF Am29F040B Am29F040

    Maxim 17113

    Abstract: 29F040 29F040 equivalent
    Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s


    OCR Scan     		PDF Am29F040 32-pin 29F040 Maxim 17113 29F040 equivalent

    3251b

    Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
    Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands


    OCR Scan     		PDF Am29F040 32-pin 3251b 29F040 3251L AM29F040-75JC AM29F040A

    am29f0408

    Abstract: 17113e AM29F040 29F040
    Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash


    OCR Scan     		PDF Am29F040 32-pin am29f0408 17113e 29F040