winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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HY29F200
Abstract: HY29F200B HY29F200T
Text: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
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HY29F200T/B
48-Pin
HY29F200
16-Bit)
G-70I,
T-70I
R-70I
G-70E,
T-70E,
R-70E
HY29F200B
HY29F200T
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fujitsu 29LV160B
Abstract: 29F800B 29LV160B 29F160B m29f800bb
Text: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright 1995.2002:
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lanSC520
D-79200
D-79206
lanSC520
fujitsu 29LV160B
29F800B
29LV160B
29F160B
m29f800bb
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PCM-997
Abstract: CS8900A DS2401 G100 J20A JP40 RTC-8564 CAN-H11 P2B E7 29F160B
Text: phyCORE-167HS/E Hardware Manual Edition May 2004 A product of a PHYTEC Technology Holding company phyCORE-167HS/E In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark and copyright () symbols
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phyCORE-167HS/E
L-615e
D-55135
PCM-997
CS8900A
DS2401
G100
J20A
JP40
RTC-8564
CAN-H11
P2B E7
29F160B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T 29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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M29F200T
M29F200B
x8/x16,
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29f200-90
Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
Text: H igh Performance 256K x8/128 « I6 X AS29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs
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AS29F200
256Kx8/128
128Kxl6
29f200-90
29F200 flash
tcp 8111
D370
344c1
es 3880 fm
AS29F200T
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Untitled
Abstract: No abstract text available
Text: AM DH 5.0 29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F200B
8-BK/128
16-Blt)
Am29F200A
20-year
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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29F200
Abstract: 29F200 amd 29F200T
Text: a P R E L IM IN A R Y Am29F200T/29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
29F200
29F200 amd
29F200T
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29F200B
Abstract: No abstract text available
Text: PRELIM INARY A M D * 29F200B 2 Megabit 256 K x 8-B it/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V + 1 0 % for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s
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Am29F200B
it/128
16-Bit)
29F200A
TSR048--48-Pin
16-038-TS48
TSR048
29F200B
29F200B
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Untitled
Abstract: No abstract text available
Text: AMDZ1 PRELIMINARY 29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s
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Am29F200B
8-Bit/128
16-Bit)
29F200A
TSR048â
48-Pin
16-038-TS48
TSR048
29F200B
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29f200b
Abstract: 0032M AM29 FLASH SO044
Text: PRELIM INARY Am29F200T/29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
44-pin
48-pin
29f200b
0032M
AM29 FLASH
SO044
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Untitled
Abstract: No abstract text available
Text: M29F200T 29F200B SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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M29F200T
M29F200B
x8/x16,
TSOP48
M29F200T,
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AS19F
Abstract: 29F2C F002T
Text: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r
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150TC
150T1
-150SI
32-bit
64-bit
128-bit
128-bit
AS19F
29F2C
F002T
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Untitled
Abstract: No abstract text available
Text: AMDH 29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
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Untitled
Abstract: No abstract text available
Text: SGS-mOMSON M29F200T 29F200B MKMilLBSTBOllDIES 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical
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M29F200T
M29F200B
x8/x16,
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29F200B
Abstract: No abstract text available
Text: M29F200T 29F200B SGS-THOMSON 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F200T
M29F200B
x8/x16,
29F200B
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Untitled
Abstract: No abstract text available
Text: M29F200T 29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F200T
M29F200B
256Kb
128Kb
10jas
M29F200T,
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Untitled
Abstract: No abstract text available
Text: M29F200T 29F200B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME
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M29F200T
M29F200B
x8/x16,
TSOP48
M29F200T,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s
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Am29F200A
8-Bit/128
16-Bit)
29F200A
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Untitled
Abstract: No abstract text available
Text: AMDH 29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s
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Am29F200A
8-Bit/128
16-Bit)
AM29F200A
29F200A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s
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Am29F200A
8-Bit/128
16-Bit)
48-Pin
16-038-TS48
TSR048
AM29F200A
29F200A
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Untitled
Abstract: No abstract text available
Text: AMDH 29F200B 2 Megabit 256 K x 8-Bit/I 28 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — Minimizes system level power requirements — Embedded Erase algorithm automatically
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Am29F200B
16-Bit)
Am29F200A
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