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    EDI8F82045C

    Abstract: EDI8F82045C100B6C EDI8F82045C70B6C EDI8F82045C85B6C
    Text: EDI8F82045C 2Megx8 SRAM Module Features 2 Megabits x 8 Static RAM CMOS, Module 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F82045LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    Original     		EDI8F82045C 100ns EDI8F82045LP EDI8F82045C 512Kx8 EDI8F82045LP) EDI8F82045C70B6C EDI8F82045C70B6I. 01581USA EDI8F82045C100B6C EDI8F82045C85B6C PDF

    9018

    Abstract: AM29F016 EDI7F332MC
    Text: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and


    Original     		EDI7F332MC 2Megx32 2Megx32 EDI7F332MC EDI7F2332MC AM29F016 150ns EDI7F332MC-BNC A0-A20 9018 AM29F016 PDF

    AM29LV008T

    Abstract: SIMM 80 jedec
    Text: EDI7F433IMV 4x1Megx32 PRELIMINARY 4X1Megx32 Flash Module The EDI7F433IMV is organized as four banks of 1 meg x 32. The module is based on AMDs AM29LV008T - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 100 and


    Original     		EDI7F433IMV 4x1Megx32 4X1Megx32 EDI7F433IMV AM29LV008T 120ns 100ns 16Kbyte, 32Kbyte SIMM 80 jedec PDF

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original     		EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H PDF

    7470 TTL

    Abstract: 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470
    Text: EDI8F82046C 2 Megx8 SRAM Module Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Approved, Revolutionary Pinout • 36 Pin DIP, No. 178


    Original     		EDI8F82046C EDI8F82046C 512Kx8 EDI8F82046C25M6C EDI8F82046C25M6I. 01581USA 7470 TTL 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    Original     		EDI9F416128C 4x128Kx16 100ns EDI9F416128LP EDI9F416128C70BNC EDI9F416128C70BNI. 01581USA PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI7F88MB 8Megx8 8Megx8 Flash Module The EDI7F88MB is organized as a 8Mx8 Flash module. The module is based on Intel's E28F008551Megx8 Flash device in a TSOP package which is mounted on an FR4 substrate. Block Diagrams EDI7F88MB 8Megx8 The module offers access times between 90 and


    Original     		EDI7F88MB EDI7F88MB E28F008551Megx8 120ns 28F008S5 A0-A19 DQ0-DQ31 PDF

    T 9722

    Abstract: Diode T 9722 EDI8G322048C
    Text: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package


    Original     		EDI8G322048C 2048Kx32 01581USA EDI8G322048C T 9722 Diode T 9722 PDF

    9373

    Abstract: EDI7F4342MC LH28F016SU
    Text: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current


    Original     		EDI7F4342MC 4x2Megx32 4x2Megx32 LH28F016SU EDI7F4342MC 150ns microprMC100BNC EDI7F4342MC120BNC 01581USA 9373 PDF

    9016

    Abstract: EDI7F34IMC EDI7F34IMC-BNC LH28F800SU CG35
    Text: EDI7F34IMC 1Megx32 1Megx32 Flash Module The EDI7F34IMC and EDI7F2341MC are organized as one and two banks of 1 Meg x 32 respectively. The modules are based on Sharp's LH28F800SU - 1Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate.


    Original     		EDI7F34IMC 1Megx32 1Megx32 EDI7F34IMC EDI7F2341MC LH28F800SU EDI7F34IMC-BNC 150ns 9016 EDI7F34IMC-BNC CG35 PDF

    7470 pin diagram

    Abstract: EDI8F2432C15MZC EDI8F2432C 7470 TTL 32Kx24
    Text: EDI8F2432C 32Kx24 SRAM Module 32Kx24 Static RAM CMOS, High Speed Module Features 32Kx24 bit CMOS Static Random Access Memory • Access Times 15, 20, and 25ns • Output Enable Function • Fully Static, No Clocks • TTL Compatible I/O High Density Packaging


    Original     		EDI8F2432C 32Kx24 EDI8F2432C 750Kbit 32Kx24. 32Kx8 EDI8F2432C25MZC 7470 pin diagram EDI8F2432C15MZC 7470 TTL PDF

    7705ac

    Abstract: 128KX32 EDI8F32128C jedec 64-pin simm 7705
    Text: EDI8F32128C 128Kx32 SRAM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and12ns CMOS: 15, 20, 25, 35, 55, 70, 85 and 100ns • Individual Byte Selects • Fully Static, No Clocks


    Original     		EDI8F32128C 128Kx32 and12ns 100ns 100ns) EDI8F32128C 01581USA 7705ac jedec 64-pin simm 7705 PDF

    Untitled

    Abstract: No abstract text available
    Text: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16


    OCR Scan     		32Megabit 1Megx32 EDI7F33IMC 32Mbit 1Megx32. 100ns 01581USA 0G0S57Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s


    OCR Scan     		EDI8F64128C 128KX64 EDI8F64128C 128Kx8 EDI8F64128C15MDC EDI8F64128C20MDC EDI8F64128C25MDC 01581USA EDBF864128C PDF

    RASH

    Abstract: EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC
    Text: E D I7F33IM C W D I 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16


    OCR Scan     		64Kbytes 01581USA 0G0S57fl ED17F33Ã RASH EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC PDF

    zd 501

    Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
    Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


    OCR Scan     		EDI8F64128C 128Kx64 66MHz CELP2X80CS3Z48 EDI8F64128C EDI8F64128C20MDC EDI8F64128C25MDC 01581USA 3S3D114 zd 501 D044 z DD54 TME 57 Z3A18 55ZJ PDF

    Untitled

    Abstract: No abstract text available
    Text: m D 2,4,8 Megabyte • Flash { ELECTRONIC d esig n s . n c I 512Kx32 Flash Module Features 2,4,8 megabyte CMOS Flash Module Family The EDI Flash Family is a five-volt-only in system Flash program­ Organization: mable and eraseable read only memory module. The modules are


    OCR Scan     		512Kx32 2x512Kx32 4x512Kx32 Time-120ns 120ns EDI7F32512CA120BNC EDI7F32512CA150BNC EDI7F232512CA120BNC EDI7F232512CA150BNC PDF

    mz70

    Abstract: No abstract text available
    Text: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory


    OCR Scan     		EDI9F81025C 2x512Kx8 EDI9F81025C 100ns EDI9F81025LP) 512Kx8 mz70 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI816256CA-RP ^ E D l 256Kx16 Ruggedized Plastic Static Ram B £ C n O H C O B G K NC. 256Kx16 Static RAM CMOS, MonolitNc F e a tu re s The EDI816256CA is a ruggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the


    OCR Scan     		EDI816256CA-RP 256Kx16 EDI816256CA EDI816256LPA20M44I EDI816256LPA25M44I EDI816256LPA20M44M PDF

    TME 87

    Abstract: 1ZD12 tme 126 30 oc9 002
    Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


    OCR Scan     		256KB 66MHz CELP2X80CS3Z48 EDI8F6432C 32Kx64 EDI8F6432C EDI8F6432C15MDC EDI8F6432C20MDC TME 87 1ZD12 tme 126 30 oc9 002 PDF

    Untitled

    Abstract: No abstract text available
    Text: WD\ EDI2A C272129V 2 Megabyte Sync/Sync Burs t Small Outline DIMM •ELEC TR O N IC DE5IS N 5, IN C ADVANCED 2x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchro­


    OCR Scan     		C272129V 2x128Kx72t EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm 2129V85D1 EDI2CG472256V9D1 2256VI PDF

    Untitled

    Abstract: No abstract text available
    Text: m EDI9F33256C a l256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		0E96N& EDI9F33256C l256Kx32 256Kx32 EDI9F33256C 256Kx4 F33256C PDF

    Untitled

    Abstract: No abstract text available
    Text: M EDI8F32512C E D I S M x 3 2 SRAM Module ELECTOONC DOGNS. WC 512Kx32 Static RAM CMOS, High Speed Module F ea tu re s The EDI8F32512C is a high speed 16 megabit Static RAM module 512Kx32 bit CMOS Static organized as 512K words by 32 bits. This module is constructed


    OCR Scan     		EDI8F32512C 512Kx32 EDI8F32512C 512Kx8 32512C EDI0F32512C PDF

    EDI88130LPS25M

    Abstract: EDI88130CS-RP 18kX
    Text: m EDI88130CS-RP a E C IR O N C « S IG N S N C . 128Kx8 Static RAM CMOS, Monolithic F e a tu re s The EDI88130CS is a ruggedized plastic 128Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the


    OCR Scan     		EDI88130CS-RP I28/0r8 128Kx8 EDI88130LPS) EDI88130CS devic25MM EDI88130CS15MI EDI88130CS17WI EDI88130LPS25M EDI88130CS-RP 18kX PDF