4X2MEGX32 Search Results

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

Contextual Info: ^EDI EDI7F4342MC • ELECTRONIC DESIGNS, INC. Features 4x2Megx32 4x2Megx32 Flash Module • 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x • Based on Sharp's LH28F016SU Flash Device 32. The module is based on Sharp's LH28F016SU - 2Megx8

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: ^EDI EDI7F4342MC m ELECTRONIC DESIGNS. INC. • Features 4x2Megx32 4x2Megx32 Flash Module ■ 4 x 2 Meg x 32 ■Based on Sharp's LH28F016SU Flash Device ■Fast Read Access Time - 80ns ■5- Volt-Only Reprogramming ■Low Power Dissipation The EDI7F4342MC is organized as four banks of 2 Meg x

Contextual Info: ^EDI EDI7F4342MV i ELECTRONIC DESIGNS, INC. Features 4x2Megx32 4x2Megx32 Flash Module • 4 x 2 Meg x 32 The EDI7F4342MV is organized asfourbanks of 2 Meg x32. • Based on Intel's 28F016B3 Flash Device The module is based on Intel's 28F016B3 - 2Megx8 Flash

9374

Abstract: EDI7F4342MV 28F016B3
Contextual Info: EDI7F4342MV 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Intel's 28F016B3 Flash Device • Fast Read Access Time - 120ns • Flexible Smart Voltage • 2.7-3.6V Program Erase • 2.7-3.6V Read Operation • 12Vpp Fast Production Programming

Contextual Info: WDI EDI7F4342MC i ELECTRONIC CESGhe, INC Features 4x2Megx32 4x2Megx32 Flash Module 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x Based on Sharp's LH28F016SU Flash Device 32. Themodule is based on Sharp’s LH28F016SU -2Megx8 Fast Read Access Time - 80ns