00D30 Search Results

GE SCR 241

Abstract: RS397 TA202412 TA20241
Contextual Info: POldEREX INC .02 DE | 72*14^1 00D30fib fc. t fC H E R g X _M . j Powerex, Inc. Hlllla Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. <3. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR

T9G0

Abstract: T9GO 50A 450V SCR powerex T9G A120A A120 BP107 RS-397 T9G01210 T9G0 POWEREX
Contextual Info: POWEREX INC m \ u m G5 D e | 72^4^21 00D30ÔS T P n s c _ Powerex, Inc. Hlllla Street, Youngwood, Pennsylvania 15897 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 z ^ ’~ D *7 T9 G0 Ptl3S& COilttOl SCR

5000 volt scr

Abstract: scr 1500v BP107 RS-397 TA20 TA202412 TA29
Contextual Info: POldEREX INC .02 DE | 72*14^1 00D30fib OWCItEX _ . j Powerex, Inc. Hlllla Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. <3. Durand, BP107, 72003 LeMana, France (43) 72.75.15 t. Ï TA20 Phase Control SCR

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

tc58nc

Abstract: tc58nc344 TC58NC353F DIN 50960 TC58NC353 47040 250880 c58nc 05735A00 031C4
Contextual Info: TC58NC353F/354F TC58NC353F/354F High Capacity Flash Disk Controller Chip Set OUTLINE TC58NC353 and TC58NC354 are a controller chip set for the PC Card ATA * and IDE Drive. By using TC58NC353 only, up to 8 NAND flash memories of 128M to 1Gbit can be connected by the unit of 1 (e.g. 1,2,3…7,8). In case of

Contextual Info: LMU12 12 x 12-bit Parallel Multiplier DEVICES INCORPORATED FEATURES □ □ □ □ DESCRIPTION 35 ns Worst-Case M ultiply Time Low Pow er CMOS Technology Replaces TRW MFY012H T w o's C om plem ent Unsigned, or Mixed O perands □ Three-State O utputs □ Available 100% Screened to

Contextual Info: MB91580L Series 32-bit Microcontroller FR Family FR81S MB91F585LA/F585LB/F585LC/F585LD/ MB91F586LA/F586LB/F586LC/F586LD/ MB91F587LA/F587LB/F587LC/F587LD Data Sheet Full Production Publication Number MB91F585LA_DS705-00012 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

bd501

Abstract: character generator 6572 MCM6571 ym oca cgob BCQB
Contextual Info: MCM6570 MCM6571 MCM6571A MCM6572 thru MCM6579 8192-BIT READ ONLY MEMORIES MOS ROW S E LEC T C H A R A C TE R G E N E R A TO R S IN -C H A N N E L , L O W T H R E S H O L D T h e M C M 6 5 7 0 is a m a s k -p ro g ra m m a b le 8 1 9 2 -b it horizontal-sear» r o w

mbc15

Abstract: TIBC MB91F465 ccf um SCCB FR70 MB91460 MB91F465XA MB91V460 QFP100
Contextual Info: FUJITSU SEMICONDUCTOR MB91F465XA preliminary datasheet MB91460 series European MCU Design Centre EMDC Fujitsu Microelectronics Europe GmbH Pittlerstrasse 47 63225 Langen, Germany Version 0.11, File: mb91f465xa_shortspec.doc European MCU Design Centre MB91F465XA preliminary datasheet ver. 0.11

LMU16GMB

Contextual Info: L M U 1 6 /2 1 6 16 x 16-bit Parallel Multiplier D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 45 ns Worst-Case Multiply Time □ Low Power CMOS Technology □ Replaces TRW MPY016/TMC216, Cypress CY7C516, IDT 7216L, and AMD Am29516 □ Two's Complement, Unsigned, or

thyristor eto

Contextual Info: DIXYS Phase Control Thyristors vR RM = 800 -1400 v RRM ^T RMS = ^ ' t (AV)M = 6 9 A V RSM VRRM v DSM V DRM V V 900 1300 1500 Type CS35-08io4 CS35-12io4 CS35-14io4 800 1200 1400 1/4"-28 UNF-2 A Symbol *T(RMS) ^T(AV)M ^TSM Test Conditions 120 63 69 A A A 10 ms (50 Hz), sine

cs23-12io2

Abstract: CS23
Contextual Info: □ CS 23 vRRM Phase Control Thyristors V RSM VRRM V DSM VDRM V V 900 1300 1700 ^T RMS ^T<AV)M T(vJ) _ T (vj)m T case = 85°C; 180° sine Tease = 69°C; 180° sine Maximum Ratings ^TSM Tw) = 4 5 °c ; V R= 0 50 25 32 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

ADM 3053

Abstract: voice transcever circuit diagram 41516 MT8980 PM4341A PM6341 PM6341E1XC PM7345 PSB 2165 H rohm "marking" T32
Contextual Info: PMC-Sierra, Inc. S tandard P roduct I I / 1 ^ ^ P M 6341E 1X C £7 FRAMER/TRANSCEIVER ISSUE 7 FEATURES • Integrates a full-featured E1 transceiver in a single device with analog circuitry fo r receiving and transm itting G.703 2048 kbit/s com patible signals and digital

MB91F587

Abstract: MB91F587LB MB91F587L MB91F587LA MB91580L MB91F585MG MB91F583 MB91F585L micom p127 MB91F586LC
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS705-00012-1v0-E 32-bit Microcontroller FR Family FR81S MB91580L Series MB91F585LA/F585LB/F585LC/F585LD/ MB91F586LA/F586LB/F586LC/F586LD/ MB91F587LA/F587LB/F587LC/F587LD  DESCRIPTION This series has Fujitsu 32-bit microcontrollers for automobile motor control. They use the FR81S CPU that

vtc amplifier 20 30 A

Abstract: vtc amplifier
Contextual Info: Y t <; x n c 33E ^¿% VTC In co rp o rated *' H FEATURES • Fast Settling Time: ±0.1% In 150ns • High Slew Rate: 90V/ is • Large Gain Bandwidth: 100MHz • Full Power Bandwidth: 4.8 MHz at 6V p-p • Ease of Use: Internally Compensated for AcL? 3 with 50°-60° Phase Margin

1A Dual Power Operational Amplifier

Abstract: 4036A
Contextual Info: V T C 33E IN C D cl 3 ô f l ci 2 ci DDD3D1S 3 IVTC VA705 HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER VTC Incorporated DISCONTINUED FEATURES • Fast Settling Time: ±0.1% in 250ns • High Slew Rate: 35V/|iS • Wide Gain Bandwidth: 25MHz • Low Offset Voltage: 1mV

Contextual Info: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )

y10 smd

Abstract: PR521
Contextual Info: LPR520/521 4 x 16-bit Multilevel Pipeline Register Üfc.VlO t-S IN C O R P O R A I L U DESCRIPTION FEATURES □ Four 16-bit Registers □ Implements Double 2-Stage Pipe­ line or Single 4-Stage Pipeline Register □ Hold, Shift, and Load Instructions □ Separate Data In and Data Out Pins

MOS 6581

Abstract: MCM658
Contextual Info: M O T O R O L MCM6580 MCM6581 MCM6583 A 8192-B IT READ O N L Y M EM O RIES MOS C O LU M N SELEC T C H A R A C T E R G EN E R A TO R S N-CHANNEL, LOW THRESHOLD T h e M C M 6 5 8 0 is a m ask-p ro g ra m m a b le 8 1 9 2 -b it v e rtic a l scan (c o lu m n select) cha ra c te r g en era tor. It c o n ta in s 128 characters in a

DDA 003A

Abstract: philips lcd 15.4 pinout 0x00000039 pulse generating circuit IC 74121 MIC Diode 5408 RPM-002 RPM-003 GPCH MC027 5E991
Contextual Info: TPS65930/TPS65920 OMAP Power-Management and System Companion Devices Silicon Revision 1.2 Version F Technical Reference Manual Literature Number: SWCU052F October 2008 – Revised December 2010 WARNING: EXPORT NOTICE Recipient agrees to not knowingly export or re-export, directly or

3-pin lever switch on/off

Abstract: switch ic EM 5103 PHOTOTRANSISTOR 3 PIN OPB690 L2561
Contextual Info: .OPIEK Product B ulletin O PB 690 July 1996 Slotted Optical Flag Switch Type OPB69Û Features • • • Phototransistor output Mechanical switch replacem ent 3-pin connector Ho Tien L2561 -03 , Moiex com patible connector 5102 series housing and 5103 series

Contextual Info: IBM014445 IBM014445M IBM014445B IBM014445P Preliminary 1M x 4 10/10 QUAD CAS EDO DRAM Features • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V • 1,048,576 word by 4 bit organization • Standard Power SP and Low Power (LP) • QUAD CAS Parity • Low Power Dissipation