003B32F Search Results

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V

Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology

Contextual Info: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V

IC 74142

Contextual Info: SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=3A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V

Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

5d3 diode

Abstract: IRLZ44A 5d3 N-Channel A/SMD 5d3 diode
Contextual Info: IRLZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ ■ ■ ■ ■ ■ ^DS on = 0 -0 2 5 Q Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

GG3C

Abstract: SGP23N60UF S1S20 tl 464
Contextual Info: SGP23N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : V CE sat = 2.2 V (at lc=12A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

74142

Abstract: SGP40N60UF INDUCTION LAMP ballast lc21
Contextual Info: SGP40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

SFP9530

Abstract: N mosfet 50v 400A
Contextual Info: SFP9530 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H B V pss = "1 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 nA Max. @ VDS = -100V

SFP9620

Contextual Info: SFP9620 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = -2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 pA Max. @ Vos = -200V

IRFZ44A

Abstract: ne 22 mosfet
Contextual Info: IRFZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10

Contextual Info: SSP5N90A A d van ced Power MOSFET FEATURES - 900 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 900V

Contextual Info: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O

IRL540A

Contextual Info: IRL540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H BVdss = 100 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 100V

Contextual Info: SFP9Z24 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ I BVdss = -60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Operating Temperature Extended Safe Operating Area Lower Leakage Current : -10 |iA Max. @ VOS = -60V

vex servo motor

Abstract: TE129 SGP6N60UFD bt 141
Contextual Info: SGP6N60UFD IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=3A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr=35nS (Typ) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

E200

Abstract: IRL510A
Contextual Info: IRL510A A d va n ce d Power MOSFET FEATURES B V DSS • ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ ■ ■ H Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS=100V

ld33a

Abstract: IRL610A
Contextual Info: IRL610A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive Rds oii = 1-5 £2 ■ Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area lD = 3.3 A

ifr 350 mosfet

Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
Contextual Info: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)

DO313

Abstract: IRLZ34A 1GIT a2633
Contextual Info: IRLZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10

mach435

Contextual Info: FIN A L COM’L: -12/15/20, Q-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Flexible clocking ■ 84 Pins in PLCC ■ 128 Macrocells ■ — Four global clock pins with selectable edges

Contextual Info: SFP9640 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 pA Max. @ VDS = -200V

Contextual Info: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V