71B4M2 Search Results

samsung KX

Abstract: ha13
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • 71b4m2 KM23C1Û01/1011 G □ □ 1 Ljc153 TÜfi ■ SMGK CMOS MASK ROM 1M-Bit (128KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072X 8 bit organization • Fast access time : 120ns(max). « Supply voltage : single+5V

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

Contextual Info: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

T2D 85 diode

Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V

KM68257

Abstract: a12g KM68257lp km68257P u 242 samsung KM68257LP-25 SRAM SAMSUNG
Contextual Info: SAMSUNG SEMICONDUCTOR IN C 23E D • 7^ 4142 GÜDñSTb T ■ CMOS SRAM KM68257P/KM68257LP 32K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.)

KM416S4030AT

Abstract: ZX-03 KM416S4030AT-G
Contextual Info: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

IRFS351

Abstract: 250M IRFS350
Contextual Info: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: b ? E Í • 7 T b 4 m 2 Q D lb T ^ O ISflGK ÖÖ5 PRELIMINARY CMOS MASK ROM SAMSUNG E LE C T R O N IC S IN C KM23V4000B G 4M-Bit (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Fast access tim e: 150ns(max). • Supply voltage: single+3V or +3.3V

Contextual Info: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 48 V 2 104 A /A L/A LL /A S L is a high spe ed C M O S 2,0 9 7 ,1 5 2 b i t x 8 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM681001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words

Contextual Info: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung

Contextual Info: KM48C514DT CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: ADVANCE INFORMATION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.

p mosfet

Contextual Info: A d va n ce d Power MOSFET S S W / I 2 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ VDS = 600V Lower R DS(0n) : 3.892 Cl (Typ.)