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3B32T Price and Stock

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Vishay Thin Film M55342E11B3B32TWS M55342E 25PPM 0402 3.32K 0.1% T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M55342E11B3B32TWS	Reel			25	1 - 10 - 100 $32.9232 1000 $32.9232 10000 $32.9232	Buy Now
Vishay Thin Film M55342E11B3B32TT5 M55342E 25PPM 0402 3.32K 0.1% T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M55342E11B3B32TT5	Reel			500	1 - 10 - 100 - 1000 $3.78432 10000 $3.78432	Buy Now
Vishay Thin Film M55342E11B3B32TTI M55342E 25PPM 0402 3.32K 0.1% T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M55342E11B3B32TTI	Reel			25	1 - 10 - 100 $39.508 1000 $39.508 10000 $39.508	Buy Now
Vishay Thin Film M55342E11B3B32TWI M55342E 25PPM 0402 3.32K 0.1% T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M55342E11B3B32TWI	Tray			25	1 - 10 - 100 $39.508 1000 $39.508 10000 $39.508	Buy Now
Vishay Thin Film M55342E12B3B32TT0 M55342E 25PPM 0603 3.32K 0.1% T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M55342E12B3B32TT0	Reel			100	1 - 10 - 100 $9.8626 1000 $9.8626 10000 $9.8626	Buy Now

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3B32T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature	OCR Scan	PDF	IRF520A QQ3b32fl 3b32ti O-220 7Tb4142 DD3b33D
mosfet vn 10 Abstract: IRFZ24A bvn mosfet 0050II Text: IRFZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV dss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10 uA Max. @ VOS= 60V	OCR Scan	PDF	IRFZ24A 30-OTO T0-220 003b32fl 3b32ti O-220 500MIN DD3b33D mosfet vn 10 bvn mosfet 0050II
Untitled Abstract: No abstract text available Text: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA Max. @ VDS = 800V	OCR Scan	PDF	SSP3N80A 00403b4 003b32fl 3b32t O-220 7Tb4142 DD3b33D
Untitled Abstract: No abstract text available Text: SIEMENS SFH 234 S SILICON FOUR-QUADRANT PHOTODIODE Package Dimensions in Inches mm \| \|.141 (0.3)\| A] Chip Location 012 (.3) max Common ~ . Cathode GrJd .018* 002 (0 450.05) 1 A Anode B - - 0 I g \| .570 039 (14.51.0)' .118±.008 I (3.00 2) .141 Anode \	OCR Scan	PDF	VR-10V, SFH234S 3b32b
Untitled Abstract: No abstract text available Text: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V	OCR Scan	PDF	SSP4N60AS G04D37b 003b32fl 3b32t O-220 00M1N 7Tb4142 DD3b33D
SSP45N20A Abstract: pj 53 diode Text: SSP45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 35 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 200V	OCR Scan	PDF	SSP45N20A 001010b 30-OTO T0-220 QQ3b32fl O-220 500MIN 7Tb414E DD3b33D SSP45N20A pj 53 diode