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    Untitled

    Abstract: No abstract text available
    Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP5N80A iti4142 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    KMM59256BN

    Abstract: KM44C256BJ
    Text: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­


    OCR Scan     		PDF KMM59256BN KMM59256BN KM44C256BJ 256KX4) 20-pin KM41C256J-256KX1) 18-pin 30-pin KMM59256BN-

    J-300

    Abstract: KM68257C KM68257
    Text: KM68257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM . FEATURES . GENERAL DESCRIPTION • Fast Aoeess Time 12 , 15 ,2 0 ns- Max.f • Low Power Dissipation ' i Standby (TTL : 40 mA (Max.) (CMOS): 2 mA (Max.) •100 )iA(Max.) - L- Ver. Operating KM68257C/CL-12:1 6 5 mA (Max.)


    OCR Scan     		PDF KM68257C 32Kx8 KM68257C/CL-12 KM68257C/CL-15 KM68257C/CL-20 KM682S7CP/CLP 28-DIP-300 257CJ/CLJ J-300 KM68257CTG/CLTG KM68257