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    00012S Search Results

    00012S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G846A100012SHR Amphenol Communications Solutions Board mount - Header Plug - Wire to Board 1.0mm Pitch Vertical SMT,1x10Pin,Matte Tin,NY9T,Color-Natural Visit Amphenol Communications Solutions
    SF Impression Pixel

    00012S Price and Stock

    PEI Genesis MS52000-12-SZ-32

    GASKET 5015 32 FRTMT
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    DigiKey MS52000-12-SZ-32 Bulk 546
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    Molex 0500798000-12-S6-D

    12" PRE-CRIMP 1853 SLATE
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    DigiKey 0500798000-12-S6-D Bulk 480 10
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    Molex 0500798000-12-S6

    12" PRE-CRIMP 1853 SLATE
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    DigiKey 0500798000-12-S6 Bulk 103 10
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    e10cel SYS LXV300-012S

    LED DRIVER CV AC/DC 12V 25A
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    DigiKey LXV300-012S Box
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    Isel USA Inc 248550-0012S

    WORKBENCH, T SLOT TOP, 1.5X.75X.
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    DigiKey 248550-0012S Bulk 1
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    00012S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIL-R-83401

    Abstract: No abstract text available
    Text: VISHAY INTERTECH/ ELEK 34E t • miS232 00012S1 0 O V I S H DATA SHEET VPN-100 c A COMPANY Precision Hermetic SIP Resistor Networks OF VISHAY FOIL RESISTORS ▼ Models 1461,1462,1463, 1464 and 1466 VISHAY Precision Hermetic Resistor Networks are now available in SIP Single-ln-Line Pin configurations. Five


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    PDF G0012S< VPN-100 500KQ) MIL-R-83401. MIL-R-83401

    10N03

    Abstract: 06N03 14N03 04N03 VU02 VU020-10N03 12n03 16N03
    Text: 4b E D i x • 4b f l b 52b 00012S 1 y s corp □IXYS b » I X Y -r * 7. V o * ‘ November 1991 Data Sheet No. 911002A Three-Phase Diode Rectifier Bridge VU020 FEATURES:_ Isolated Direct Copper Bond Base Plate Easy Chassis Mounting


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    PDF 00012S 11002A E72873M) VU020 VU020-04N03 VU020-06N03 VU020-08N03 VU020-10N03 VU020-12N03 VU020-14N03 10N03 06N03 14N03 04N03 VU02 12n03 16N03

    150a gto

    Abstract: CLD41 CLD41B CLD42 CLD42A CLD42B CLD41A K8060
    Text: FASCO INDS/ SENISYS 4QE 34Ti73fl D 00012SÔ 7 EaSÈNI I B E EEia • ' T - t - t l ' JD I CLD41/CLD42 Series Silicon Planar Photodiodes 1r— 0.025 r*“ F e atu res C0.64J A b s o lu te M a x im u m R atin g s *1* T a = 25°C unless otherwise stated. Storage Temperature. -40°Ct0 +150,C


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    PDF CLD41/CLD42 00012SÃ CLD41/42 CLD41) CID42) 10mW/cm2. CLD42 150a gto CLD41 CLD41B CLD42 CLD42A CLD42B CLD41A K8060

    sCapacitor

    Abstract: DELTA MODULATION ENCODER BS9450
    Text: M X-CÔM INC 37E ]> • SbbOfil? 00012SS MX* QDAA, INC. pM 7 MflXC MX629 ß a ty 'r J ß y ä ffl MILITARY DELTA MODULATION CODEC FEATURES APPLICATIONS • • • • • • • Military Communications • Multiplexers, Switches & Phones MeetsMil-Std-188-113


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    PDF 00012SS MX629 MeetsMil-Std-188-113 MX629 Mil-Std-188-113, BS9450. BS9450 BS9450 sCapacitor DELTA MODULATION ENCODER

    Untitled

    Abstract: No abstract text available
    Text: 10 Watt NT Series Featu res • Fully Self Contained, No External Parts Required for Operation ■ High Power Density, up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85% ■ Overcurrent Protected for Long, Reliable Operation


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    PDF UL1459 1500NT

    TME 57

    Abstract: D02S D012 D031 EDI8M3264C
    Text: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static


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    PDF 000125b EDI8M3264C 64Kx32 EDI8M3264C 64Kx4 oI8M3264C 3S30114 00012h0 EDI8U3264C TME 57 D02S D012 D031

    melec 1200

    Abstract: LZ1232M lz1232 Quad TTL to MOS Driver
    Text: SHARP E L E K / M ELEC D IV 15E 0 | a ü ü l ^ 4 ci 0 | 32-Unit High Voltage MOS 1C LZ1232M T -5 2 -1 3 -0 5 LZ1232M 32-Unit High Voltage MOS IC Pin Cnnections Description The LZ1232M is a 32-unit high voltage MOS IC fabricated using an N-channel DSA MOS process.


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    PDF 32-Unit 0Q124C1 LZ1232M T-52-13-05 16-bit melec 1200 lz1232 Quad TTL to MOS Driver

    Untitled

    Abstract: No abstract text available
    Text: FASCO INDS/ SENISYS 4 DE J> 34=1=1733 000155 b 3 SH SEN I ijjQ S I I CLD40 ru t* Silicon Planar Photodiode i DIMENSIONS ARE IN INCHES [M ILLIM ET ER S Features Absolute Maximum Ratings^1* Ta = 25°C unless otherwise stated.) • • • • • Storage +8S°C


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    PDF CLD40 Temperature11. 10mW/cma

    Untitled

    Abstract: No abstract text available
    Text: WSS 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A


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    PDF M33-2N MIL-R-28750. bll2b40

    AK8406

    Abstract: tri linear CCD signal detection circuit "peak hold" constant vol slo syn HS 50
    Text: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8 bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference


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    PDF AK8406] 250mVp-p 15Vp-p AK8406 fl3b35 AK8406 tri linear CCD signal detection circuit "peak hold" constant vol slo syn HS 50

    daic0

    Abstract: No abstract text available
    Text: RF2 . I '• © © T RF COMM , -QNB- © © © RF3 -GND- © © © 500 ¿ \ 50ft m S @ © -4 - -4 - DS0404 SP4T © À¿ \ À¿ \ ” ¿ \ ‘ ^ m son 1 0 ® 1 • Built-in TTL compatible driver • Unused ports terminated in 5Q ohms I I © -GND — 1 "1"


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    PDF DS0404 DS0404 daic0

    S18A

    Abstract: No abstract text available
    Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available


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    PDF 2N7218 2N7219 2N7221 2N7222 O-254AA S18A

    Untitled

    Abstract: No abstract text available
    Text: SbE J> Dû7flti3b 0 0 0 1 2 5 1 öbD « A M T O P E Xs APEX M I C R 0 T E C H N 0 L 0 6 Y CORP 2 2 .5 W A TT D C -D C C O N VER TER DB2815S DB2815SA A P EX M ICRO TECH N O LO G Y CO RPORATION • TU CSO N . ARIZONA » A P P LIC A TIO N S HO TLIN E 80 0 4 2 1 -1 8 6 5


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    PDF DB2815S DB2815SA AZ505901 254mm 127mm DB2815S 254mm

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SE MI CONDUCTOR 20E D 70^25^7 000124b 7 P3C3198/P3C3198L SUPER FAST 16K X 4 STATIC CMOS RAMS SCRAMS 7$ FEATURES • Full CMOS, 6T Cell ■ Output Enable and Chip Enable Control Functions ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation


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    PDF 000124b P3C3198/P3C3198L Active-12 Active-20 P3C3198L 28-Pin MIL-STD-883C P3C3198 -12PC -12JC

    STM CL-70

    Abstract: DI-149 ic laf 0001 laf 0001 equal A23 1101 01A laf 0001 power LD SOT 423 STS SOT t04 sot 23 U802A
    Text: SOT-3 Device STM-1/STS-3/STS-3c Overhead Terminator TXC-03003B DATA SHEET Product Preview DESCRIPTION = The SOT-3 SDH/SONET overhead terminator is a pro­ grammable device that performs section, line and path overhead processing for STM-1/STS-3/STS-3c signals.


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    PDF TXC-03003B TXC-05601, TXC-21061, OT-3/SYN155/ADMA-E1 SYN155 RS-232 TXC-03003b-mb STM CL-70 DI-149 ic laf 0001 laf 0001 equal A23 1101 01A laf 0001 power LD SOT 423 STS SOT t04 sot 23 U802A

    Untitled

    Abstract: No abstract text available
    Text: NN51V4400B series Fast Page Mode CMOS 1M x4b it Dynamic RAM DESCRIPTION The NN51V4400B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­


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    PDF NN51V4400B NN51V440QBL V4400BXX 128ms 0QQ13Q4

    BL 176A

    Abstract: No abstract text available
    Text: ATMEL CORP HTE D • 1074177 0QD124S 0 ■ A T76C 176A T -S 2-& -& FEATURES • • • • • • • • Personal System/2*, 8514A, and VGA* Compatible High Pixel Rates to 110 MHz Supports High Resolution 1280 x 1280 Pixels Color Graphics Displays Low Standby Current Less than 100/<A PLCC Packages Only


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    PDF 0QD124S 18-Bit 200mA Desc-80JI AT76C176A2-80JI AT76C176A-110PC AT76C176A1-110JC AT76C176A2-110JC AT76C176A BL 176A

    Untitled

    Abstract: No abstract text available
    Text: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference


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    PDF AK8406] 250mVp-p 15Yp-p AK8406

    Oak Technology

    Abstract: PC111
    Text: CHAPTER 10 ELECTRICAL DATA 10.1 D C SPECIFICATIONS 10.1.1 TA = 0° CTO 70° C, VDD = 5V +/- 5%, VSS = 0V Symbol Parameter Min Max Unit Condition V Ioh = 400 uA Voh Output High Voltage Voi Output Low Voltage 0.4 V lol = 24 mA 1,2 Vol Output Low Voltage 0.4


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    PDF 256-pin b72T405 Oak Technology PC111

    Untitled

    Abstract: No abstract text available
    Text: [AK6480H] ASAHI KASEI A K 6 4 8 OH Wide Vcc 2.5V ~ 5.5V 8192bit Serial Electrically Erasable PROM Features □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (25V ~ 5.5V) operation - 8192 bits: 512 X 16 organization □ ONE CHIP MICROCOMPUTER INTERFACE


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    PDF AK6480H] 8192bit AK6480H 0007-E-00 CHfl3b35