D02S Search Results

BYT230PIV600

Abstract: BYT230PI-600 BYT230PIV-600 D8403 M3054 BYT230PIV IEC134 sot-227a definition RMS forward current SOT227A
Contextual Info: 2 SE D • BYT230PIV600 to 800 bbS3T31 D02S5D1 a ■ N AMER PHILIPS/DISCRETE 7=0 3 - 1*1 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very iow stored charge and soft-recovery characterisitc.

D02S

Abstract: CRT1B-ID02S 24 VDC power supply omron
Contextual Info: Bit Slave Units with e-CON Connectors CRT1B-@D02S -1 Simple and Intelligent Bit Slaves with Industry-standard e-CON connectors. Slave Units capable of 2-point bit-level distribution. The I/O power supply is supplied from the communications power in the previously connected flat cable, and has a

Contextual Info: 37E D 430SE71 HARRIS D02S17D SEMICOND G B HAS^igh-Reliabmiy High-Speed C M O S Logic ICs SECTOR CD54HC373/3A CD54HCT373/3A Octal Transparent Latch, 3-State ‘¡P&-G7-/I . T he R C A CD 54H C373 and CD 54 H C T 3 7 3 are high speed Octal Transparent Latches m anufactured with silico n gate

BSP109

Abstract: BSP103 BSP105 marking 5.il N-channel 2.5V sot223
Contextual Info: Philips Semiconductors Data sheet status Product specification date of issue April 1991 • D02SMfl2 137 H A P X B S P 103 /B S P 105 / B S P 109 N-channel enhancement mode vertical D-MOS transistors N AMER L.7E D QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL,

bfr106

Contextual Info: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

2BMSI

Abstract: LT8291 3polig
Contextual Info: Gekapselte Motorschalter Motor switches in enclosure Motor switches Motorschalter 108 - 113 Dimensions Maßzeichnungen 114 - 120 Technical tables Technisch Tabellen 121 - 122 107 Motorschalter T-Reihe Motor switches T series Ein-Ausschalter, 3-polig On-off switches, 3 poles

Contextual Info: TC7W02FU- - - - - - - - - - - - - - - - TC7W02FU Unit in mm DU A L 2-INPUT NO R GATE The TC7W02FU is a high speed C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.

ADC7802

Contextual Info: For I m e M e M i m e , M a d M Local Salesperson Autocalibrating, 4-Channel, 12-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • LOW POWER: 10mW plus Power Down • SIGNAL-TO- NOISE + DISTORTION RATIO OVER TEMPERATURE: 69dB min with fM = 1kHz 66dB min with fM = 50kHz

Contextual Info: Or, Call Customer S e m e at 1-S00-548-6132 USA Only • PROCESS CONTROL • INTERNAL SENSE RESISTORS • INDUSTRIAL CONTROL • PRECISION 10V REFERENCE • FACTORY AUTOMATION • BUILT-IN LEVEL-SHIFTING • DATA ACQUISITION • ±40V COMMON-MODE INPUT RANGE

toshiba S-AU

Abstract: TC5165805
Contextual Info: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 4 - 1 3 5 1 22 - 11 E E Linearte converter CM O S D/A Converter for Digital Tuning 8-Channel, 8-bit, on-chip OP amp, low-voltage _ MB88347L • DESCRIPTION The MB88347L incorporates eight 8-bit D/A converter modules. This device operates at low supply voltage in

Contextual Info: FUJITSU S EM ICO NDUCTO R DATA SHEET ASSP Communication Control Data Link Controller DLC MB89374 • DESCRIPTION The MB89374 Data Link Controller (DLC) controls transfer of serial data in accordance with Bit Oriented Protocol (BOP). It supports protocols such as High level Data Link Control (HDLC) (the BOP mode) and Serial Data

Contextual Info: Data Sheet January 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations T7256 Single-Chip NT1 SCNT1 Transceiver Features • U- to S/T-interface conversion for ISDN basic rate (2B+D) systems — Integrated U- and S/T-interfaces — Operates in stand-alone mode to provide U- and

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

950B

Contextual Info: A T & T MELEC CMPNT/ PWR 25E D AT&T Preliminary Data Sheet T -5 7 -1 1 950-Series Power Modules; 48 Vdc Input Features • High efficiency: r) = 85%, typ. (950A) Ti = 88%, typ. (950B) ■ Parallel operation with load sharing ■ Low profile: 0.6 in. ■ Complete input and output filtering

Contextual Info: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.

MARKING SA transistor

Abstract: marking code ER transistor KST1623L6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current

Contextual Info: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emltter Voltage: V cto= 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO -6 0 -4 0 -5 -600 625

1NA111BP

Abstract: RG511 SOL16 package 2507 D02SD70 2N4117
Contextual Info: B U R R -B R O W N INA111 i High Speed FET-lnput INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • FET INPUT: lB= 20pA max • HIGH SPEED: Ts = 4}is (G = 100, 0.01% • LOW OFFSET VOLTAGE: 500|iV max The IN A 111 is a high speed, FET-input instrumenta­

d02s60c

Abstract: idv02s60c d02s60 JESD22 d02s6
Contextual Info: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

Contextual Info: N ANER PHILIPS/DISCRETE 25E D • bt.S3T31 QaaEbbT S ■ BYV118 SERIES , l 7 = V 0 3 -/7 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

LB 1639 1 L0

Abstract: Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068
Contextual Info: ok ,i . Philips Sem iconductors • bb53T31 D025DB4 36b « A P X AflER P H I L I P S / D I S C R E T E Product specification b?E D NPN 8 GHz wideband transistor FEATURES • BFQ67W PIN CONFIGURATION PINNING PIN High power gain DESCRIPTION • Low noise figure