Untitled
Abstract: No abstract text available
Text: 74ôb34b 00007L.7 AMI « R C D SURFACE MOUNT ACTIVE DIGITAL DELAY LWES SERIES SMA1405 SMALL OUTLINE 5-TAP SERIES SMA2805 PLCC PACKAGE 5-TAP SERIES SMA2810 PLCC PACKAGE 10-TAP • S O and P L C C form ats w ith 50-m il pin spacing ■ Excellent for applications requiring high delay
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00007L
SMA1405
SMA2805
SMA2810
10-TAP
SMA2805
SMA2810
260UT
SMA1405
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Untitled
Abstract: No abstract text available
Text: ADVANCED POUER TECHNOLOGY blE H • O B ä T W i 00007L1 IS! ■ AVP ADVANCED POWER! Te c h n o l o g y O O M O s POWER MOS IV APT5040CN APT4540CN APT5050CN APT4550CN 500V 13.0A 0.40D 450V 13.0A 0.40Î2 500V 11.5A 0.50Î2 450V 11.5A 0.50Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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00007L1
APT5040CN
APT4540CN
APT5050CN
APT4550CN
4540CN
5040CN
4550CN
5050CN
O-254AA
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C-CUBE CL450
Abstract: CL9100
Text: C L 4 5 0 MPEG V id e o D e c o d e r U s e r’s M a n u a l % C-Cube Microsystems • IVbM EbT 00DQ4Ô0 flbE ■ C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod
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00DQ4Ã
CL450
17b45bT
C-CUBE CL450
CL9100
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BCW67A
Abstract: No abstract text available
Text: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38
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BCW67,
BCW68,
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
BCW67A,
BCW67B,
BCW67A
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B34 ZENER DIODE
Abstract: ZY15 ZENER diode Y8 ZY18 58A2 diode zener 345 FA60R FAG 32 H 48 zener diode ZY10
Text: S7E ]> • 345^355 0GÜ07bG GSS ■ F G R S FAGOW zY2oo FA60R Dimensions in mm. ELECTRONICS DO-15 F-126 58 A 2 Plastic TH l-^ S Voltage 1 to 200 V Power 2.0 W Mounting instructions 1 Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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DO-15
F-126
QDD07bb
B34 ZENER DIODE
ZY15
ZENER diode Y8
ZY18
58A2
diode zener 345
FA60R
FAG 32
H 48 zener diode
ZY10
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Untitled
Abstract: No abstract text available
Text: GLASS PASSIVATED RECTIFIERS 3 Ê L ili ^ U . — m Ia PLASTIC MATERIAL U SED C A R R IE S UL 94V-0 OPERATING AND STO RA GE T EM PERA TU RE RANGE : -65 "C to +175 °C TYPE Maximum Peak Reverse Voltage VpK A av | °C ‘K f i f f m t i A i t * . ii & iS t iii L _ § lX M $ 3 lf
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PASSIVATED/DO-41
1N4001G
1N4002G
1N4003G
1N4004G
1N4005G
1N4006G
1N4007G
DO-201
DO-41
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE ASSEMBLIED RECTIFIERS rs j ^ âs- '/ifL I f - PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATINGAND STORAGE TEMPERATURE RANGE : -20°C to+135'C JUUiipj'HS.&S TYPE M axim um Peak Reverse Voltage S.A.isLitjsS^SSL PRV M axim um Average Rectified Current
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HVP10
HVP12
HVP14
HVP15
HVP16
DO-201
DO-41
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PDF
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AK4310
Abstract: AKD4310
Text: ASAH I K A S E I [A K 4 3 1 0] The AK4310 is a 1bit stereo DAC for multimedia audio system. A 1bit DAC can achieve monotonicity and low distortion with no adjustment and is superior to traditional R -2 R ladder based DACs. In the AK4310, the loss of accuracy from clock jitter is also improved by using SCF techniques for on-chip post filter. The
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AK4310]
AK4310
AK4310,
256fs
384fs,
10kHz
50kHz
20kHz
AKD4310
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SY100E452
Abstract: SY10E452 r-2524 Q4-04
Text: * 5-BIT DIFFERENTIAL REGISTER SYNERGY SY10E452 SY100E452 SEMICONDUCTOR DESCRIPTION FEATURES • Differential D, CLK and Q ■ V bb output for single-ended use ■ ■ ■ ■ ■ 1100MHz min. toggle frequency Asynchronous Master Reset Extended 100E V ee range of -4.2V to -5.46V
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SY10E452
SY100E452
1100MHz
MC10E/100E452
SY10E452
SY100E452
T0013fll
00007L
r-2524
Q4-04
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1.5FMCJ220
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1
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DO-214AB
5FMCJ10
5FMCJ10A
5FMCJ11
5FMCJ11A
5FMCJ12
5FMCJ12A
5FMCJ13
5FMCJ13A
5FMCJ15
1.5FMCJ220
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Untitled
Abstract: No abstract text available
Text: SILICON RECTIFIERS ^ BET PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 ”C to +175 “C TYPE M axim um Peak Reverse V o ltag e M axim um Average Rectified Current @ Half W ave Resistive Load PRV 60 Hz Io @ T a Superim posed
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DO-201
DO-41
0Q007L
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 "C to +175 °C _it^ .j'ii6jS if TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak
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DO-201
DO-41
0Q007L
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PDF
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Untitled
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS » A i m If PLASTIC MATERIAL USED C A R R IE S UL 94V-0 OPERATING AND STO RA GE T EM PER A T U R E RANGE : -55°C to+150°C M-k. S u p e rim p o s e d lFM S urge M a x im u m F o rw a rd V o lta g e @ 25 °C T a Ir ^A dc Ifm A pk V fm *75
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DO-201
DO-41
Q007L
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Untitled
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING TEMPERATURE RANGE : -55 °C to +125 "C STORAGE TEMPERATURE RANGE : -55 °C to+150°C Maximum Maximum Reverse Forward Peak Current Surge Current @ PR V @ 8.3ms @25 °C T a Superim posed lFM Surge
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RS101
RS102
RS103
RS104
RS105
RS106
RS107
DO-201
DO-41
0Q007L
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marking 68g
Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Text: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration
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BCW67,
BCW68,
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
67series
marking 68g
B44 transistor
BCW67
BCW67A
BCW67B
BCW67C
BCW68
BCW68F
BCW68G
BCW68H
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eeprom s 130 dn 66
Abstract: No abstract text available
Text: IBM11T1645L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 1Mx64 Extended Data Out SODIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tÒAC CAS Access Time 15ns
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IBM11T1645L
1Mx64
104ns
124ns
Vss/18Vcc
128ms
50H7629
SA14-4459-00
00QD7fll
eeprom s 130 dn 66
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage
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DIODE/DO-41
DO-201
DO-41
Q007L
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 °C to +175 °C TYPE M a x im u m P eak R e ve rse V o lta g e M a x im u m A ve ra g e R e c tifie d C u rre n t @ H alf-W ave R e s is tiv e L o a d
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PASSIVATED/DO-214AC
DO-201
DO-41
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING TEMPERATURE RANGE 20V to 45V : -65 °C to +125 °C 50V to 60V : -65 "C to + 150°C STORAGE TEMPERATURE-65 °C to+150°C TYPE Maximum Peak Reverse Voltage PRV FM220
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TEMPERATURE-65
FM220
FM230
FM240
FM250
FM260
AMPERE-SCHOTTKY/DO-214AB
AMPERE-SCHOTTKY/DO-214AA
DO-201
DO-41
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY RECTIFIERS •ife i t — f e l t PLASTIC MATERIAL USED CARIPIES UL94V-0 OPERATING AND STORAGE TEMPERATURE -65 “C to +150 V PRV Maximum Forward Peak Surge Current @ 8.3ms Superimposed Maximum Reverse Current @ PRV Maximum Forward Voltage @ 25 °C Ta
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UL94V-0
DO-201
DO-41
0Q007L
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PDF
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M/AC/220
Abstract: No abstract text available
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS T§7 — ^ fê k fa PLASTIC M ATERIAL USED C AR R IES UL 94V-0 O PER A TIN G AND STO RAGE T E M P E R A T U R E -65 "C t o +175 "C TYPE M axim um Peak Reverse Voltage M axim um Average Rectified Current @ Half-W ave
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DO-201
DO-41
Q007L
M/AC/220
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PDF
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Untitled
Abstract: No abstract text available
Text: SUPER FAST RECTIFIERS te s t PLASTIC M ATERIAL USED C AR R IE S UL 94V -0 OPERATING A N D STO RA GE TE M P E R A TU R E -65 "C to +150 °C *. Q < VpK Maximum Forward Peak Surge Current @ 8.3ms Superimposed lFM Surge d PRV Maximum Average Rectified Current
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FAST7TO-220A
DO-201
DO-41
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PDF
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diode ESM 134
Abstract: No abstract text available
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED C AR R IE S UL 94V-0 O PERATING AND STO RA GE TE M PE R A TU R E -65 "C to +175 "C TYPE M axim um Peak Reverse Voltage M axim um Average Rectified Current @ Half-W ave Resistive Load 60Hz
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SM4001
DO-201
DO-41
0Q007L
diode ESM 134
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Untitled
Abstract: No abstract text available
Text: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration
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000G7b5
BCW66F,
BCW66G
BCW66H
00007L
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