BCW67 Search Results

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BCW67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type BCW BCW BCW BCW BCW BCW 67 67 67 68 68 68 A B C F G H Marking

marking 68g

Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

BCW67A

Contextual Info: 23033^4 □0GD7b4 b44 itili 'H t BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38

Contextual Info: 34 M O T O R O L A SC i D I O D E S / O P T O l 6 3 6 7 2 5 5 MOTOROLA SC ÖF^LBb7aSS DI ODES/ OPTO 34C DDBöaS? t 38257 D SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching

marking 68g

Abstract: BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H SA series transistor
Contextual Info: BCW67, A, B, C BCW68, F, G, H CDfll GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.09 3 Pin configuration

BCW 90

Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BCW66. NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BCW65

Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

Contextual Info: Transistors IC SMD Type Product specification BCW67,BCW68 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High current gain. 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

marking 68g

Abstract: B44 transistor BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: 23Ô33T4 b44 if II BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS A LL DIMENSIONS IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration

BCW67

Abstract: BCW65 BCW66 BCW67A BCW68 ferranti
Contextual Info: 4 FER R AN TI ¥ semiconductors BCW67 BCW68 PNP Sil icon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW65 and BCW66.

BCW Smd transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transisto r Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG

BCW65

Abstract: BCW65A BCW65B BCW65C BCW66 BCW66F BCW66G BCW66H BCW67 BCW68
Contextual Info: BCW65, BCW66 NPN Silicon AF Transistor 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 PNP 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E

68G MARKING

Contextual Info: BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 67A DA BCW 67B DB BCW 67C DC BCW68F DF BCW 68G DG BCW 68H DH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

transistor marking DG

Abstract: transistor marking code df BCW67 BCW67B
Contextual Info: BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a

SC08810

Contextual Info: f Z 7 SGS-THOMSON Ä 7 # M SR i[LiOT8raO@§ BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW67A DA BCW67B DB BCW67C DC BCW68F DF BCW68G DG BCW68H DH . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

ic 556

Abstract: BCW67 BCW67A BCW67B BCW67C BCW68
Contextual Info: CDIL BCW67C, 68H BCW67, A, B, C BCW68, F, G, H hFE min. 250 max. 630 min. min. min. 35 60 100 IC = 300 mA; V<;e = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE hFE hFE R A TIN G S at T a = 25°C unless otherwise specified Limiting values Collector-base voltage (open emitter)

marking 68g

Abstract: 67A SOT 23 6 BCW67
Contextual Info: Tb M O T O R O L A SC Í X S T R S / R F> r 6367254 M OT OR OL A SC CXSTRS/R D l T | b3L,755M 96D F 81953 D D flnsa D M A XIM U M RATINGS Sym bol BCW67 BCW68 Coliector-Emitter Voltage Rating VCEO 32 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc Emitter-Base Voltage

BCW66

Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
Contextual Info: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices

BCW88H

Abstract: BCW67CR BCW67 BCW67A BCW67AR BCW67B BCW67BR BCW67C BCW68F BCW68FR
Contextual Info: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY

SMD Transistor 68f

Abstract: smd transistor marking da 68g diode bcw68f smd BCW67B marking 68g smd diode DH BCW67 BCW67A BCW68
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking

transistor marking DG

Abstract: MARKING CODE DH SOT 23 BCW67 marking code da
Contextual Info: Central BCW67 SERIES BCW68 SERIES TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: BCW67 SERIES BCW68 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a

BCW67CR

Abstract: BCW67AR BCW68GR BCW67 BCW68HR BCW65 BCW66 BCW67A BCW67B BCW67C
Contextual Info: BCW67 BCW68 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current