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    onsemi BCW65ALT1G

    TRANS NPN 32V 0.8A SOT23-3
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    onsemi BCW65CLT1G

    TRANS NPN 32V 0.8A SOT23-3
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    onsemi BCW65CLT1

    TRANS NPN 32V 0.8A SOT23-3
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    Rochester Electronics LLC BCW65CLT1

    TRANS NPN 32V 0.8A SOT23-3
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    onsemi BCW65ALT1

    TRANS NPN 32V 0.8A SOT23-3
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    BCW65 Datasheets (149)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCW65 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BCW65 Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF
    BCW65 Infineon Technologies NPN Silicon AF Transistor Original PDF
    BCW65 Kexin NPN General Purpose Transistors Original PDF
    BCW65 Siemens NPN Silicon AF Transistors (For general AF applications High current gain) Original PDF
    BCW65 Siemens Cross Reference Guide 1998 Original PDF
    BCW65 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCW65 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original PDF
    BCW65 Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    BCW65 Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    BCW65 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    BCW65 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
    BCW65 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCW65 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BCW65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCW65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCW65 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCW65 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCW65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCW65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ...

    BCW65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW65ALT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO


    Original
    PDF BCW65ALT1 236AB) 20mAdc, BCW65ALT1

    BCW65A

    Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -


    Original
    PDF BCW65 BCW66 BCW65A13 BCW65B BCW65BR BCW65CR BCW65C BCW65A BCW66F BCW66FR BCW66H BCW65 BCW66G

    BCW65C

    Abstract: No abstract text available
    Text: BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    PDF BCW65C OT-23 BCW65C

    BCW66

    Abstract: EFs SOT-23 BCW65 egs SOT23
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1


    Original
    PDF BCW65 BCW66 OT-23 BCW65 BCW66 EFs SOT-23 egs SOT23

    BCW65ALT1

    Abstract: No abstract text available
    Text: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225


    Original
    PDF BCW65ALT1 236AB) r14525 BCW65ALT1/D BCW65ALT1

    BCW65

    Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
    Text: BCW67, BCW68 PNP Silicon AF Transistors 3  For general AF applications  High current gain  Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B


    Original
    PDF BCW67, BCW68 BCW65, BCW66 BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW65 BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H

    Untitled

    Abstract: No abstract text available
    Text: BCW67, BCW68 PNP Silicon AF Transistors 3  For general AF applications  High current gain  Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B


    Original
    PDF BCW67, BCW68 BCW65, BCW66 VPS05161 BCW67A BCW67B BCW67C BCW68F BCW68G

    BCW65AR

    Abstract: BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F
    Text: BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA


    Original
    PDF BCW65 BCW66 150oC BCW65AR BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F

    BSS79C

    Abstract: BCW65C
    Text: BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process 19. • See BCW65C for characteristics. C E B SOT-23 Mark: CF Absolute Maximum Ratings * Ta=25°C unless otherwise noted


    Original
    PDF BSS79C 500mA. BCW65C OT-23 BSS79C

    bf255

    Abstract: No abstract text available
    Text: BSR14 NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. • Sourced from Process 19. • See BCW65C for characteristics. C E SOT-23 B Mark:U8 Absolute Maximum Ratings*


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    PDF BSR14 BCW65C OT-23 bf255

    BCW65A

    Abstract: No abstract text available
    Text: Central BCW65 SERIES BCW66 SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and


    Original
    PDF BCW65 BCW66 BCW65A: BCW65B: BCW65C: OT-23 500mA, 20MHz BCW65A

    BCW65 ec

    Abstract: BCW66H BCW65AR
    Text: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA


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    PDF BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BCW65 BCW67 BCW66 BCW68 BCW65 ec BCW66H BCW65AR

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1


    Original
    PDF BCW65 BCW66 OT-23 BCW65 100ge

    Untitled

    Abstract: No abstract text available
    Text: BCW65ALT1 General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 32 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    PDF BCW65ALT1 OT-23

    BCW65C

    Abstract: BSR14 SOT23 NE
    Text: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol


    Original
    PDF BSR14 OT-23 BCW65C BSR14 SOT23 NE

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR


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    PDF BCW65A, BCW65B BCW65C BCW65A

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor BCW65C SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Rstinys T A = 2 5 ° C unless o th e rw ise noted


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    PDF BCW65C OT-23

    Diodes Marking K6

    Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


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    PDF OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING

    transistors BC 23

    Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
    Text: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N


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    PDF P3000 BSS64 BSS79 BSS81 BSS63 transistors BC 23 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55

    BCW66

    Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG


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    PDF BCW65 BCW66 -BCW65A- BCW65B- BCW65C- BCW66F- BCW66G- BCW66H- -BCW65 BCW67 BCW65A BCW68 bcw66fr

    L50Q

    Abstract: BCW65C
    Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.


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    PDF BCW65C LS01130 004D673 L50Q BCW65C

    Untitled

    Abstract: No abstract text available
    Text: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER


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    PDF BCW65A, BCW65B BCW65C BCW65A BCW65B

    BCW67

    Abstract: BCW65 BCW66 BCW67A BCW68 ferranti
    Text: 4 FER R AN TI ¥ semiconductors BCW67 BCW68 PNP Sil icon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW65 and BCW66.


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    PDF BCW67 BCW68 BCW65 BCW66. OT-23 BCW68 BCW67/68, BCW66 BCW67A ferranti

    Diodes Marking K7

    Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B


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    PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23