0.1UF Search Results

1000PF

Abstract: LTC6431IUF-15 BOM-16 R13 SMA NO STUFF COMPONENT ADT2-1T HD2X4-100 R14-R17 HD2X6-100 LTC6430
Contextual Info: 5 4 3 2 1 REVISION HISTORY 3 4 4 5 6 7 8 9 10 11 12 SMA 2 3 4 5 6 C2 1000pF R3 *0603 B C9 62pF 2 4 6 8 1 3 5 7 19 DNC 20 21 22 VCC DNC +OUT * DNC GND DNC T_DIODE DNC DNC DNC GND DNC -OUT R14 * 0603 DNC U1 DNC L1 560nH C22 0.1uF T4 4 15 R19 14 OPT C15 1000pF

C1608

Abstract: C1608 tdk PART NUMBER 1H104K
Contextual Info: TDK MLCC Datasheet C1608 X7R 1H 104 K T XXXX TDK P/N 1 No. 1 1 2) 3) Segment 4) 5) 6) 7) Detail Comments 1.6 x 0.8 mm Case Size ο See below for dimensions. ±15% 2 Temperature Characteristics -55+125 C 3 Rated Voltage 50V DC 4 Capacitance 100,000 pF or 0.1uF

R5F21258SDFP

Abstract: R5F21258SNFP
Contextual Info: A-D accuracy 10bit Type: R5F21258SNFP Topr=-20 to 85degrees C R5F21258SDFP(Topr=-40 to 85degrees C) Topr=85 degrees C AVcc-Vss: 0.1uF Vref-Vss: 0.1uF ANIN-Vss: 0.1uF AVcc=Vref=5.120V Xin=20MHz φAD=10MHz sample and hold=on Repeat mode Absolute accuracy -1.97LSB

transistor p14

Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
Contextual Info: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.

HI1206T500R-10

Abstract: CON10AP sp0503 xc2s200efg456 con10A TP2G RJ48 b20 p03 A3RR27 TP3G
Contextual Info: 5 4 3 2 1 1 T TP11 TP10 J2 CON10AP 1 + + 3 + + 5 + + 7 + + 9 + + C3 0.1uF R25 2.7K M18 M21 M20 N17 N18 N20 N19 P17 A14 G5 Y19 P21 Y18 MRST CS SCLK SDI SDO AIN0 AIN1 26 25 P0.2 P0.3 INT 24 30 29 P0.4 P0.5 28 27 P0.6 P0.7 PGM INIT DONE CCLK CDOut 23 22 21 20

HEADER 10X2

Abstract: NDS9425A BLS0 Dp 104 ISP1362 8d15 R1618 FB215 VCC33
Contextual Info: 1 2 3 4 VCC33 C15 104u 1 3 5 7 9 11 13 15 17 19 2 4 6 8 10 12 14 16 18 20 D0 D2 D4 D6 D8 D10 D12 D14 GND INTDC +5V 1 3 5 7 9 11 13 15 17 19 HEADER 10X2 D1 D3 D5 D7 D9 D11 D13 D15 GND INTHC 2 4 6 8 10 12 14 16 18 20 C17 104u C19 C18 104u 104 GND R6 10K 0.1uF

MT48LC8M16A2

Abstract: PC15 RTL8201BL header8 DB9_MALE AT45DB128
Contextual Info: Port C Pins assignment 104 PB22/SCK1 as UART1 RI Input 122 PB27/PCK0 as UART1 DTR (Output) ADDR12 not connected to U3,U4 ADDR13 connected to U3.A11,U4.A11 See Page 139 Man.rev.from 22-Aug-03 R11 10 C27 0.1uF R14 10 C30 0.1uF R18 10 C19 0.1uF VDDPLL PLLRCA

AOCJY OCXO Vref

Contextual Info: AOCJY OCXO APPLICATION NOTE REFERENCE VOLTAGE OUTPUT Figure 1 Vc (Control Voltage) 0.01uf 1 R1 2 R2 5 GND AOCJY OCXO Vref Vdd 5 TOP View 3 RF Output 4 GND AOCJY OCXO Vref 10k 1 0.1uf AOCJY devices also provide a Regulated DC output on pin # 2 (Vref ). The value of this voltage is dependent

LT8614EUDC

Contextual Info: 4 3 ECO SYNC R1 100K E2 + C1 22uF 63V R6 OPT C11 10uF 50V 1206 SUNCON 63CE22BS C2 1uF 50V 13 C12 1uF 50V * 14 E6 JP1 E5 SYNC GND C 17 1 2 3 2 16 C7 1uF 25V GND * 15 R2 18.2K 2MHz E9 TR/SS E7 C8 0.1uF B VEMI VEMI E10 C14 0.1uF 50V 0402 VIN2 BST SYNC L1

Contextual Info: 5 4 3 2 1 REVISION HISTORY ECO REV _ 3 DESCRIPTION APPROVED DATE PRODUCTION WALKER B. 09-25-13 D D GND E1 C11 0.1uF 50V E2 EN/UV SYNC C C12 0.1uF 50V C3 4.7uF 50V 1206 L2 4.7uH C10 4.7uF 50V 1206 + C1 22uF 63V SUNCON 63CE22BS C2 2.2uF 50V 1206 C13 0.1uF 50V

Contextual Info: 5 4 3 2 1 REVISION HISTORY ECO REV DESCRIPTION APPROVED DATE 1 FIRST PROTOTYPE LEO C. 06/02/10 D D C1 0.1uF VCC C3 4 6 7 5 VCC 11 3 JP1 9 R2 4.99K R3 4.99K 1% 1% 6 E4 GND 7 3 B 2 SCL WP A2 A1 A0 5 4 3 14 5 EEVCC EESDA EEGND NC B U2 24LC025-I/ST 1630 McCarthy Blvd.

Contextual Info: SMD Type Aluminium Electrolytic Capacitor PART NUMBERING Product symbol CD50S 221 M 1E D A Aluminium Cap Type CD50S KESENES Aluminium Electrolytic Capacitor (85 Product) CD50H KESENES Aluminium Electrolytic Capacitor (105 Product) Capacitance ( 0.1uF = 0R1

XC2C64A-6VQG44C

Abstract: DNP C37 108 c42 ADTL1-12 D10P KDC5512H-Q48EVAL KDC5512-Q48EVAL KDC5514-Q48EVAL NB6L14MMNG 5514P
Contextual Info: KDC5512-Q48EVAL, KDC5512H-Q48EVAL, KDC5514-Q48EVAL KDC5512-Q48EVAL, KDC5512H-Q48EVAL, KDC5514-Q48EVAL Schematics Vcm C22 0.1uF C38 0.1uF C39 100pF SDO SCLK 100pF 100pF SDIO 100pF pin37 pin20 C23 CSB C34 C19 0.1uF C33 C17 0.1uF C32 C12 0.1uF DNP DNP C36 100pF

NJM2243S

Abstract: 0.1uf 01UF NJM2243 NjM224
Contextual Info: NJM2243 • 使 用 上 の 注 意 バイアス形式 SW でのミュートを設定する方法はバイアス形式 SW のミュート信号入力端子を C（0.1uF 程度）を通して GND に接続してください。 例） Input C ≅ 0.1uF C

NJM2293

Abstract: 0.1uf
Contextual Info: NJM2293 • 使 用 上 の 注 意 バイアス形式 SW でのミュートを設定する方法はバイアス形式 SW のミュート信号入力端子を C（0.1uF 程度）を通して GND に接続してください。 例） Input C ≅ 0.1uF C

Contextual Info: 1 2 3 4 5 REVISION HISTORY VIN 0V - 80V VIN E1 D1 SMAJ75A-13-F R2 51 E2 GND C2 1000pF 100V C1 0.1uF 100V 1206 VDD_SEL 1 2 3 4 5 6 VIN 12 4 DESCRIPTION APPROVED DATE MARK T. 10-26-12 PRODUCTION INTVCC 1 INTVCC EXTVDD 0.020 1% 2010 E4 10 ALERT 9 ADR1 ALERT R3

Contextual Info: 5 4 3 2 1 REVISION HISTORY ECO REV _ 3 DESCRIPTION APPROVED PRODUCTION SAM Y. E12 E1 TEMP R1 VIN 10K 3.3V / 4A MAX E9 GND C11 OPT 1206 FB1 R3 13.3K E4 TRACK1 C21 OPT R7 C25 0.1uF R9 OPT COMP1 B7 INTVCC1 C4 A6 SS1 C1 D1 D2 C E10 VOUT2 2.5V / 4A MAX E11 GND

RJ113BZ

Abstract: A13 smd R7300 smd transistor A6 smd diode a6 1B1 SMD smd transistor A13 D2 24 smd diode SMD a7 Transistor RD 1V
Contextual Info: 5 4 2 1 R1 1M Y1 XTLN U1 D 3V3D 3V3A RSET_BG 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 RXIP RXIN 1V8A TXOP TXON R6 12K 1% 1V8_OUT R7 300 (1%) 1V8D 1V8D D7 D6 0.1uF RSET_BG VCC3V3A NC GNDA RXIP RXIN VCC1V8A TXOP TXON GNDA 1V8_OUT VCC3V3D GNDD GNDD

hif3fc10pa254dsa

Abstract: IBM REV 2.7 user manual
Contextual Info: REJ10J0756-0120 M16C Flash Starter User's Manual M16C/6S 64PIN Example Circuit RENESAS SINGLE-CHIP MICROCOMPUTER M16C Family Rev.1.20 2006.12.01 Revision date: Dec 01, 2006 Renesas Solutions Corp. http://www.renesas.com/ 1. Using MF_Ten-Nine Cable 0.1uF 0.1uF

VG-469 Reference Design #7

Abstract: 74 HTC 164 74 HTC 192 74 HTC 191 VG-469 dr25 diode datasheet BCA25 SI9956 LTC1315 MAX780D
Contextual Info: 8 7 6 5 4 3 2 1 +12V U4 1 R17 100K 3 2 D 4 +12V +12V S1 D1 S2 D1 G1 D2 G2 SI9956 D2 8 3.3V 7 6 D 5 A_CARD_VCC VCC R18 100K U5 1 3 + C18 10uF C19 0.1uF 2 4 +12V +12V U3 18 19 A_VPPEN1 A_VPPEN0 C A_VCCEN1 A_VCCEN0 B_VPPEN1 B_VPPEN0 B_VCCEN1 B_VCCEN0 A_VPPEN1

VG-469 Reference Design #8

Abstract: Vadem VG-469 dr25 diode datasheet VG469 LTC1315 MAX780D 74HCT12 74 HTC 191 BCA19
Contextual Info: 8 7 6 5 4 3 2 1 +12V U6 1 R16 100K 3 2 D 4 +12V +12V S1 D1 S2 D1 G1 D2 G2 SI9956 D2 8 3.3V 7 6 D 5 A_CARD_VCC VCC R17 100K U7 1 3 + C18 10uF C19 0.1uF 2 4 +12V +12V U5 18 19 A_VPPEN1 A_VPPEN0 C A_VCCEN1 A_VCCEN0 B_VPPEN1 B_VPPEN0 B_VCCEN1 B_VCCEN0 A_VPPEN1

usb ferrite bead fb1

Abstract: SP213EHCA DB9M DB9M DATASHEET ferrite bead usb fb1 93C46 usb ferrite fb1 VCC232 FT232BM U229
Contextual Info: CN-USB CN1 USB SHIELD 5 6MHz RESONATOR 27R R2 Y1 27R VCC R1 2 US232B Application Schematic 1 2 3 4 C1 10nF FERRITE BEAD 1 FB1 VCC232 1k5 R3 C2 33nF R5 2k2 VCC FB2 31 2 1 32 4 28 27 5 7 8 6 C3 0.1uF R4 470R TEST 1 2 3 4 EEDATA EESK EECS RESET# XTOUT XTIN RSTOUT#

HMD8M32M4

Abstract: HMD8M32M4G R1571
Contextual Info: HANBit HMD8M32M4G 32Mbyte 8Mx32 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G GENERAL DESCRIPTION The HMD8M32M4 is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF

Contextual Info: KMM374S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM374S823CTS PC100 Unbuffered DIMM KMM374S823CTS SDRAM DIMM