DSASW00146005.pdf by Cree

Partial File Text CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree's CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSASW00146005.pdf preview

Download Datasheet

User Tagged Keywords

32QAM circuit 440166 ATC600L CGH5503 CGH55030 CGH55030-TB CGH55030F1 CGH55030P1