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    ATC600L Search Results

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    ATC600L Price and Stock

    American Technical Ceramics Corp ATC600L100FW200

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    Bristol Electronics ATC600L100FW200 492
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    American Technical Ceramics Corp ATC600L0R4BT200T

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 200V, 25% +TOL, 25% -TOL, C0G, 30PPM/CEL TC, 0.0000004UF, SURFACE MOUNT, 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600L0R4BT200T 9,380
    • 1 $0.66
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    • 1000 $0.66
    • 10000 $0.231
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    American Technical Ceramics Corp ATC600L0R3AT200T

    CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.3 PF, SURFACE MOUNT, 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600L0R3AT200T 8,591
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    American Technical Ceramics Corp ATC600L0R5BT200T

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 200V, 20% +TOL, 20% -TOL, C0G, 30PPM/CEL TC, 0.0000005UF, SURFACE MOUNT, 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600L0R5BT200T 8,000
    • 1 $0.994
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    • 100 $0.994
    • 1000 $0.994
    • 10000 $0.2982
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    American Technical Ceramics Corp ATC600L0R5AT200T

    CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.0000005 UF, SURFACE MOUNT, 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600L0R5AT200T 3,200
    • 1 $2
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    • 10000 $0.44
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    Find more ATC600L price and stock on Findchips.com

    ATC600L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		PDF MSWS4T-1004 A17141

    Untitled

    Abstract: No abstract text available
    Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA


    Original     		PDF MSWSH-100-30 A17090

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2

    Untitled

    Abstract: No abstract text available
    Text: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		PDF MSWS3T-1004 A17140

    Untitled

    Abstract: No abstract text available
    Text: MSWS5T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #16 PIN #5 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground PIN #2 Description Features A SP5T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		PDF MSWS5T-1004 A17142

    Untitled

    Abstract: No abstract text available
    Text: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		PDF MSWS3T-1004 A17140

    Untitled

    Abstract: No abstract text available
    Text: MSW5T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #16 PIN #5 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground PIN #2 Description Features A SP5T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		PDF MSW5T-1004 A17142

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    hemt .s2p

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 hemt .s2p

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Features •       MAGX-000245-025000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package


    Original     		PDF MAGX-000245-025000 MAGX-000245-025000

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    A55167

    Abstract: MSWSH-100-30
    Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA


    Original     		PDF MSWSH-100-30 A17090 A55167 MSWSH-100-30