CGH55030F1 Search Results

CGH55030F1 Price and Stock

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MACOM CGH55030F1 RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH55030F1	Tray	21		1	1 $181.39 10 $150.884 100 $181.39 1000 $181.39 10000 $181.39	Buy Now
Mouser Electronics	CGH55030F1					1 $177.31 10 $152.39 100 $152.39 1000 $152.39 10000 $152.39	Get Quote

CGH55030F1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH55030F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166		Original	PDF

CGH55030F1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CGH5503 Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	PDF	CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
32QAM circuit Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	PDF	CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L
32QAM circuit Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	PDF	CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB
RO4350B Abstract: No abstract text available Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	PDF	CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B
RO4350B Abstract: No abstract text available Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	PDF	CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B