DSA00588992.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., t
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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PRSS0003AF-A RJH30 RJh30H RJH30H1 RJH30H1DPP-M0 Silicon N Channel IGBT High Speed Power Switching

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