This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
Preliminary Datasheet
RQA0011DNS
R07DS0095EJ0200
Rev.2.00
Aug 27, 2010
Silicon N-Channel MOS FET
Features
High output power, High gain, High efficiency
Pout = +39.6 dBm, Linear gain = 2