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    RQA0011DNS Search Results

    RQA0011DNS Result Highlights (1)

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    RQA0011DNS#G1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RQA0011DNS-G0

    MOSFET N-CH 16V 3.8A 2HWSON
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    RQA0011DNS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0011DNS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0011DNSTB-E Renesas Technology Silicon N-Channel MOS FET Original PDF

    RQA0011DNS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RQA0011

    Abstract: RQA0011DNS Ga FET marking k
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0600 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS Ga FET marking k PDF

    RQA0011DNS

    Abstract: RQA0011DNSTB-E c10 capacitor
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0500 Rev.5.00 Sep 08, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0500 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011DNS RQA0011DNSTB-E c10 capacitor PDF

    marking 951

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623
    Text: RQA0011DNS Silicon N-Channel MOS FET REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		RQA0011DNS REJ03G1600-0100 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" marking 951 RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 WSON0504-2
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0200 Rev.2.00 Aug 27, 2010 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0200 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 WSON0504-2 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0800 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0004 PG890 RQA0011DNSTB-E PDF

    R07DS0095EJ0800

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0800 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011â R07DS0095EJ0800 PDF

    RQA0011

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0400 Rev.4.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0400 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 PDF