Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RQA0011 Search Results

    RQA0011 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RQA0011DNS#G1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
    SF Impression Pixel

    RQA0011 Price and Stock

    Renesas Electronics Corporation RQA0011DNS-G0

    MOSFET N-CH 16V 3.8A 2HWSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RQA0011DNS-G0 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    RQA0011 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0011DNS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0011DNSTB-E Renesas Technology Silicon N-Channel MOS FET Original PDF

    RQA0011 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RQA0011

    Abstract: RQA0011DNS Ga FET marking k
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0600 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS Ga FET marking k PDF

    RQA0011DNS

    Abstract: RQA0011DNSTB-E c10 capacitor
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0500 Rev.5.00 Sep 08, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0500 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011DNS RQA0011DNSTB-E c10 capacitor PDF

    marking 951

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623
    Text: RQA0011DNS Silicon N-Channel MOS FET REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		RQA0011DNS REJ03G1600-0100 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" marking 951 RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 WSON0504-2
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0200 Rev.2.00 Aug 27, 2010 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0200 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0011DNSTB-E ZO 103 MA 75 623 WSON0504-2 PDF

    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0800 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0004 PG890 RQA0011DNSTB-E PDF

    R07DS0095EJ0800

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS R07DS0095EJ0800 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0011â R07DS0095EJ0800 PDF

    RQA0011

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0400 Rev.4.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		RQA0011DNS WSON0504-2: R07DS0095EJ0400 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF