TS16949
Abstract: ZXMN3F318DN8 ZXMN3F318DN8TA
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
|
Original
|
ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
TS16949
ZXMN3F318DN8
ZXMN3F318DN8TA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
|
Original
|
ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
|
PDF
|
ZXMN3F318DN8TA
Abstract: TS16949 ZXMN3F318DN8 ZXMN3
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
|
Original
|
ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
ZXMN3F318DN8TA
TS16949
ZXMN3F318DN8
ZXMN3
|
PDF
|
GE1030
Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds
|
Original
|
DCS/PCN-1119
PCN-1119
OT223,
OD323,
OD523,
OT323,
OT23-6,
OT23-5
GE1030MOT223
ZXTP2014GTC
GE1030
FSV064
fmmt451ta
ZXM61N03FTA
FST866FTD
ZXTN25050DFHTA
BS250FTA
ZXMP3F37DN8TA
sot23-6
|
PDF
|
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)
|
Original
|
2000/53/EC
2000/53/EC
2002/95/EC
2011/65/EU
SOR/2014-254
SJ/T11363-2006
GL-106
AP3039AM
12SN7
AZ1117EH-3
AP3031K
zabg6001
SMBJ11CA
ztx689
DMN33D8L
ap1901
AP3502
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.
|
Original
|
GBJ2508
DDTB123EKâ
DDTB123ECâ
DDTD123TKâ
DDTD123TCâ
GBPC2510*
GBJ2510
DDTB123TKâ
DDTB123TCâ
DDTD123YKâ
|
PDF
|
zxczm800
Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)
|
Original
|
2000/53/EC
2000/53/EC
2002/95/EC
SJ/T11363-2006
zxczm800
SDPB1K10NB-7
zds1002
1N4007 MINI MELF
ZXCZA200
SBR40S45CT
ZXCZM800QPATR
ZLNB153X8TC
zxnb4200
zetex BSS138TA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description
|
Original
|
ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
|
PDF
|