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    Diodes Incorporated ZXMN3B14FTA

    MOSFET N-CH 30V 2.9A SOT23-3
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    Diodes Incorporated ZXMN3A01ZTA

    MOSFET N-CH 30V 2.2A SOT89
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    Diodes Incorporated ZXMN3A14FTA

    MOSFET N-CH 30V 3.2A SOT23-3
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    Diodes Incorporated ZXMN3A14FQTA

    MOSFET N-CH 30V 3.9A SOT23-3
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    Diodes Incorporated ZXMN3A04KTC

    MOSFET N-CH 30V 18.4A DPAK
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    ZXMN3 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN3A01 Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6 Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6 Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6TA Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6TA Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6TC Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01E6TC Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01F Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01F Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01FTA TY Semiconductor MOSFET N-CH 30V 2.0A - SOT-23 Original PDF
    ZXMN3A01FTA Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01FTC Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A01Z Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Original PDF
    ZXMN3A01ZTA Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.3A SOT89 Original PDF
    ZXMN3A02N8 Zetex Semiconductors Original PDF
    ZXMN3A02N8TA Zetex Semiconductors Original PDF
    ZXMN3A02N8TC Zetex Semiconductors Original PDF
    ZXMN3A02X8 Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A02X8 Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN3A02X8TA Zetex Semiconductors 30V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance Fast switching speed


    Original     		ZXMN3A14F AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		ZXMN3B14F ZXMN3B14FTA PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.


    Original     		ZXMN3F30FH ZXMN3F30FHTA 400gs PDF

    ZXMN3A01E6TC

    Abstract: ZXMN3A01E6 ZXMN3A01E6TA
    Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01E6TC ZXMN3A01E6 ZXMN3A01E6TA PDF

    MLP832

    Abstract: ZXMN3AM832 ZXMN3AM832TA ZXMN3AM832TC
    Text: ZXMN3AM832 MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		ZXMN3AM832 MLP832 ZXMN3AM832 ZXMN3AM832TA ZXMN3AM832TC PDF

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC
    Text: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC PDF

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
    Text: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 12m22 ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d PDF

    3G32D

    Abstract: TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA
    Text: ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features


    Original     		ZXMN3G32DN8 ZXMN3G32DN8TA 3G32D D-81541 3G32D TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA PDF

    DS35722

    Abstract: ZXMN3A01ZTA
    Text: A Product Line of Diodes Incorporated ZXMN3A01Z ADVANCE INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V BR DSS Features and Benefits RDS(on) Max ID max TA = 25°C (Note 5) 120mΩ @ VGS = 10V 3.3A 180mΩ @ VGS = 4.5V 2.7A


    Original     		ZXMN3A01Z AEC-Q101 DS35722 ZXMN3A01ZTA PDF

    4422 mosfet

    Abstract: 4422 datasheet DC/DC motor forward reverse control ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC
    Text: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.025W; ID=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC 12m3-7100 4422 mosfet 4422 datasheet DC/DC motor forward reverse control ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		ZXMN3B14F ZXMN3B14FTA un100 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN3B14F ADVANCED INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		ZXMN3B14F ZXMN3B14FTA ZXMN3B14FTC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN3A02N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC PDF

    58AA

    Abstract: ZXMN3A04DN8 ZXMN3A04DN8TA ZXMN3A04DN8TC
    Text: ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.025⍀ ID=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		ZXMN3A04DN8 ZXMN3A04DN8TA ZXMN3A04DN8TC 58AA ZXMN3A04DN8 ZXMN3A04DN8TA ZXMN3A04DN8TC PDF

    TS16949

    Abstract: ZXMN3F30FH ZXMN3F30FHTA
    Text: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features


    Original     		ZXMN3F30FH ZXMN3F30FHTA ZXMN3F30ex D-81541 TS16949 ZXMN3F30FH ZXMN3F30FHTA PDF

    TS16949

    Abstract: ZXMN3F318DN8 ZXMN3F318DN8TA
    Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable


    Original     		ZXMN3F318DN8 ZXMN3F318DN8TA D-81541 TX75248, TS16949 ZXMN3F318DN8 ZXMN3F318DN8TA PDF

    DFN3020B-8

    Abstract: Marking G2 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V


    Original     		DFN3020B-8 DS35087 DFN3020B-8 Marking G2 SOT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V


    Original     		DFN3020B-8 DS35087 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN3A01Z ADV AN CE I N FORM AT I ON 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V BR DSS Features and Benefits RDS(on) Max ID max TA = 25°C (Note 5) 120mΩ @ VGS = 10V 3.3A 180mΩ @ VGS = 4.5V


    Original     		ZXMN3A01Z DS35722 PDF

    d67a

    Abstract: No abstract text available
    Text: ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.025⍀ D=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		ZXMN3A02X8 ZXMN3A02X8TA ZXMN3A02X8TC d67a PDF

    marking 205a

    Abstract: D205A
    Text: ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=2.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC 200ephone: marking 205a D205A PDF

    Untitled

    Abstract: No abstract text available
    Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable


    Original     		ZXMN3F318DN8 ZXMN3F318DN8TA D-81541 TX75248, PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		ZXMN3A03E6 OT23-6 OT23-6 ZXMN3A03E6TA ZXMN3A03E6TC PDF