TS16949
Abstract: ZXMN3F318DN8 ZXMN3F318DN8TA
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
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ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
TS16949
ZXMN3F318DN8
ZXMN3F318DN8TA
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Untitled
Abstract: No abstract text available
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
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ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
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ZXMN3F318DN8TA
Abstract: TS16949 ZXMN3F318DN8 ZXMN3
Text: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
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Original
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ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
ZXMN3F318DN8TA
TS16949
ZXMN3F318DN8
ZXMN3
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description
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ZXMN3F318DN8
ZXMN3F318DN8TA
D-81541
TX75248,
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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complementary MOSFET TO252
Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and
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D-81541
A1103-04,
complementary MOSFET TO252
zxmc10a816n
DMG2307L
DMC2700UDM
DMP21D5UFB4
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DMG1012
Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS
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A1103-04,
DMG1012
ZVN4206GV
ZXMS6004FFTA
zxmhc3f381n8
DMP2066
DMN2075
DMN2041
ZVN4306G
dmp2035
ZXMHC3A01N8
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GE1030
Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds
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DCS/PCN-1119
PCN-1119
OT223,
OD323,
OD523,
OT323,
OT23-6,
OT23-5
GE1030MOT223
ZXTP2014GTC
GE1030
FSV064
fmmt451ta
ZXM61N03FTA
FST866FTD
ZXTN25050DFHTA
BS250FTA
ZXMP3F37DN8TA
sot23-6
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AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)
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2000/53/EC
2000/53/EC
2002/95/EC
2011/65/EU
SOR/2014-254
SJ/T11363-2006
GL-106
AP3039AM
12SN7
AZ1117EH-3
AP3031K
zabg6001
SMBJ11CA
ztx689
DMN33D8L
ap1901
AP3502
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Untitled
Abstract: No abstract text available
Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.
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GBJ2508
DDTB123EKâ
DDTB123ECâ
DDTD123TKâ
DDTD123TCâ
GBPC2510*
GBJ2510
DDTB123TKâ
DDTB123TCâ
DDTD123YKâ
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ZTX653 equivalent
Abstract: ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651
Text: Version 5.0 Discrete and standard IC product guide Discrete and standard IC product guide Zetex Semiconductors is a specialist in analog technology. We design and manufacture semiconductor solutions for the management of power and analog signals in high performance products.
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2002/95/EC)
ISO/TS16949
ZTX653 equivalent
ZDT6790
ZXGD3003E6
transistor equivalent ztx1053a
ZTX753 equivalent
ZDT1049
fmmt417
SOT23-6 NMOS 150V
ZTX415
equivalent FZT651
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zxczm800
Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)
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2000/53/EC
2000/53/EC
2002/95/EC
SJ/T11363-2006
zxczm800
SDPB1K10NB-7
zds1002
1N4007 MINI MELF
ZXCZA200
SBR40S45CT
ZXCZM800QPATR
ZLNB153X8TC
zxnb4200
zetex BSS138TA
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