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    ZI MARKING CODE TRANSISTOR Search Results

    ZI MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    ZI MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE • ObE D b b S a ^ l OD1SOSS MRB11350Y V T -3 3 -lir P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		MRB11350Y PDF

    RTC11175Y

    Abstract: MRB11175Y
    Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		MRB11175Y FO-67 T-33-/LS 7Z21013 7294SÃ RTC11175Y MRB11175Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR


    OCR Scan     		LTE21015R OT44QA MGL062 PDF

    Zn33

    Abstract: MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33
    Text: « N AMER P H I L I P S / D I S C R E T E bbS3T31 OkE D 00 15115 A M I PTB42003X T - 33 -¿> *7 MICROW AVE POW ER TRA N SISTO R N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.


    OCR Scan     		PTB42003X wiPTB42003X 0Q1511Ã Zn33 MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33 PDF

    MRB11350Y

    Abstract: No abstract text available
    Text: J _ - N AMER PH ILIP S/D ISCRETE ObE D • ■ ■ I l _ —- bbSBTBl OD1SDSS 1 ■ MRB11350Y Â _ r-22-le PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended fo r use in m ilitary and professional applications. It operates


    OCR Scan     		MRB11350Y r-33-fg MRB11350Y PDF

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.


    OCR Scan     		bb53T31 BSR13 BSR14 7Z82485 PDF

    PMBT2369

    Abstract: No abstract text available
    Text: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli­ cations in thick and thin-film circuits.


    OCR Scan     		PMBT2222 PMBT2222A PMBT2369 PDF

    LBE1004R

    Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
    Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		LBE/LCE1004R LBE/LCE2003S LBE/LCE2009S) LBE/LCE1010R LBE1004R LBE1010R LCE1004R LCE1010R IEC134) 1004R amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier Marking LBE PDF

    MCD656

    Abstract: LWE2025R
    Text: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.


    OCR Scan     		-T-33-OS LWE2025R 7110fl2b FO-93) MCD656 T-33-05 MCD656 LWE2025R PDF

    BSR13

    Abstract: BSR14 CBO10
    Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA


    OCR Scan     		711Qaeb BSR13 BSR14 BSR13 BSR14 7Z82486 7Z82484 CBO10 PDF

    bel 187 transistor

    Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
    Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn PDF

    IEC134

    Abstract: PTB42001X PTB42002X
    Text: 1 - 3 IN T E R N A T IO N A L SbE D • 711DêSfc. - 0 / PTB42001X PTB42002X L P H IL IP S 3 GDMmMM Ô11 ■ P H IN MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide


    OCR Scan     		PTB42001X PTB42002X GD4L444 PTB42002X FO-41B. IEC134 PDF

    marking YJ transistors

    Abstract: IEC134 PTB42001X PTB42002X
    Text: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide


    OCR Scan     		PTB42001X PTB42002X PTB42001X PTB42002X Zq-50 marking YJ transistors IEC134 PDF

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15 PDF

    PKB20010U

    Abstract: No abstract text available
    Text: J_L N AtlER PHILIPS/DISCRETE QbE D • bbS3TBl DDlSOfl? 3 ■ “ II PKB 20010U MAINTENANCE TYPE _ /V T -33-01 MICROWAVE POWER TRANSISTOR N-P-N silicon transistor fo r use in space, m ilitary and professional applications. It •


    OCR Scan     		20010U PKB20010U PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D • ^ 5 3 1 3 1 0014^45 7 ■ LKE21050T MAINTENANCE TYPE for new design use LVE21050R T -3 1 ~ 0 7 MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.


    OCR Scan     		LKE21050T LVE21050R) PDF

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER P H I L I P S / D I S C R E T E • Jl MAINTENANCE TYPE D D lS in 1 PV3742B4X T - 'll- O ' MICROWAVE POWER TRANSISTOR N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz, . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PV3742B4X PDF

    142 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR


    OCR Scan     		LTE42012R OT44QA MGL013 142 transistor PDF

    common emitter amplifier

    Abstract: LKE27010R amplifier marking code D
    Text: 1 I N AMER PHILIPS/DISCRETE OhE D • bfci53ci31 DD3,4T47 Ü ■ MAINTENANCE TYPE LKE27010R T-33-O ST M ICRO W AVE LINEAR PO W ER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold metallization


    OCR Scan     		bfci53cà DD14TM7 LKE27010R T-33-OiT FO-53. LKE2701 T-33-05. to200 common emitter amplifier amplifier marking code D PDF

    MARKING CODE Zi sot363

    Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration


    OCR Scan     		Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS PDF

    Untitled

    Abstract: No abstract text available
    Text: J_£, N AMER PHILIPS/DISCRETE ObE D • bb53T31 0014^3=1 1 ■ LKE2015T MAINTENANCE TYPE for new design use LTE21015R T-23-^5" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		bb53T31 LKE2015T LTE21015R) PDF

    Untitled

    Abstract: No abstract text available
    Text: LWE2025R Maintenance type - not for new designs MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a common-emitter,class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications. Features: • Interdigitated structure giving a high em itter efficiency


    OCR Scan     		LWE2025R FO-93) Microwave-93. LWE2025F PDF