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    Abstract: No abstract text available
    Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		PDF MRB11175Y bb53T31 Q01S05M 7Z210t3

    RTC11175Y

    Abstract: MRB11175Y
    Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,


    OCR Scan     		PDF MRB11175Y FO-67 T-33-/LS 7Z21013 7294SÃ RTC11175Y MRB11175Y