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    Z9 DIODE Search Results

    Z9 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    Z9 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ksd2015

    Abstract: Z9 sot-23 code Z9 sot 23 marking code Z9 KSD-2015-000 SDZ10V marking zener Z9 Z9 SOT23
    Text: SDZ10V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ10V Marking Package Code Z9 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1


    Original     		PDF SDZ10V OT-23 KSD-2015-000 ksd2015 Z9 sot-23 code Z9 sot 23 marking code Z9 KSD-2015-000 SDZ10V marking zener Z9 Z9 SOT23

    diode z9

    Abstract: ksd2050 diode zener z9 Z9 DIODE SDZ10VF zener 8v diode
    Text: SDZ10VF Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ10VF Marking Package Code Z9 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC


    Original     		PDF SDZ10VF OT-23F KSD-2050-000 diode z9 ksd2050 diode zener z9 Z9 DIODE SDZ10VF zener 8v diode

    Semtech Electronics

    Abstract: BAT60BWS marking Z9 diode z9 Z9 SOD323
    Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • PIN High current rectifier Schottky diode with very low VF drop typ.0.24 V at IF =10mA • For power supply applications • For clamping and protection in DESCRIPTION 1 Cathode 2 Anode 2 1 Z9 low voltage applications


    Original     		PDF BAT60BWS OD-323 t10ms) OD-323 Semtech Electronics BAT60BWS marking Z9 diode z9 Z9 SOD323

    BAT60BWS

    Abstract: TS28 transistor z9 z9 diode
    Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • PIN High current rectifier Schottky diode with very low VF drop typ.0.24 V at IF =10mA • For power supply applications • For clamping and protection in DESCRIPTION 1 Cathode 2 Anode 2 1 Z9 low voltage applications


    Original     		PDF BAT60BWS OD-323 t10ms) OD-323 BAT60BWS TS28 transistor z9 z9 diode

    diode z9

    Abstract: Z9 SOD323 z9 diode transistor z9 BAT60BWS MARKING MS SOD323
    Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • High current rectifier Schottky diode with very low VF drop • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF BAT60BWS OD-323 OD-323 diode z9 Z9 SOD323 z9 diode transistor z9 BAT60BWS MARKING MS SOD323

    Z9 SOD323

    Abstract: transistor z9 BAT60BWS
    Text: BAT60BWS SILICON SCHOTTKY DIODE PINNING Features • High current rectifier Schottky diode with very low VF drop • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF BAT60BWS OD-323 OD-323 Z9 SOD323 transistor z9 BAT60BWS

    BZX84 X8

    Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
    Text: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage


    Original     		PDF BZX84C2V4 BZX84C47 OT-23 O-236) UL94V-0 Y14/Z9 Y15/A0 Y16/B0 BZX84 X8 SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3

    c3v9

    Abstract: c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89
    Text: BZV49 SERIES ISSUE 4 - AUGUST 1996 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Zener Voltage VZ at IZ=2mA Type VOLTS BZV49: Nom. BZV49 SERIES SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES Differential Resistance rZ at IZ=2mA Ω Temperature Coefficient SZ at IZ=2mA


    Original     		PDF BZV49 BZV49: c3v9 c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1


    Original     		PDF 350mW BZX84C10 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes Two Terminals - 400mW 400mW Marking Code Part No. TZDP4.3BWS TZDP4.7BWS TZDP5.1BWS TZDP5.6BWS TZDP6.2BWS TZDP6.8BWS TZDP7.5BWS TZDP8.2BWS TZDP9.1BWS TZDP10BWS TZDP11BWS TZDP12BWS TZDP13BWS TZDP15BWS TZDP16BWS TZDP18BWS TZDP20BWS TZDP22BWS


    Original     		PDF 400mW TZDP10BWS TZDP11BWS TZDP12BWS TZDP13BWS TZDP15BWS TZDP16BWS TZDP18BWS TZDP20BWS

    marking z17

    Abstract: z1 BZX84C4V7 BZX84C3V9 marking Z1 sot Z5.6 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B
    Text: SURFACE MOUNT ZENER DIODES BZX84C-SERIES 350mW CrossPart No. Marking Zener Max.Dyn. Test Max.Dyn. Test Temp. Rev. Code Voltage Imped. Current Imped. Current Coeff. Current @ Izt @ Izt @ Izt @Vr Vz V Zzt(Ω) Reference @ Izk Izt(mA) Zzk(Ω) Izk(mA) avz(%/k)


    Original     		PDF BZX84C-SERIES 350mW BZX84C2V7 MMBZ5223B BZX84C3 MMBZ5225B BZX84C3V3 MMBZ5226B BZX84C3V6 MMBZ5227B marking z17 z1 BZX84C4V7 BZX84C3V9 marking Z1 sot Z5.6 BZX84C3 MMBZ5223B

    Untitled

    Abstract: No abstract text available
    Text: I 96/ZL/ro VOSQZSd PERIS utcjS tuq jpoie •siojsisai nMop oiSoq /dnjini joj paan atp Supunniiip pire sjndm a2nproQll SnnnaAajd aoirepadnn-qSiq oj sao2 mdm aqj .eía3C3i¡m ajos isüi s^ndm atp sim a l qoiqM .p io n sng, sanaca; osp J£VZE>Z9 LLDdfrUd 3qj.


    OCR Scan     		PDF aptQ245CT 162Q245DT 162Q245ET PS2050A

    BUT51P

    Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
    Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS


    OCR Scan     		PDF t3fci72S4 BUT51Pdarlington BUT51P 340D-01 O-218 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor

    1rf9530

    Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
    Text: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n


    OCR Scan     		PDF IRF9530/9531Z9532/9533 IRFP9130/9131/9132/9133 IRF9530/IRFP9130 -100V IRF9531 /IRFP91 IRF9532/IRFP91 IRF9533/IRFP9133 O-220 1rf9530 IRF9530 IRF9530 mosfet L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131

    marking z7

    Abstract: Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION D IO D ES Device Type D IO D ES Device m arking Device Type Device m arking BAV70 A4 B ZX84-C43 X6 BAV74 JA B ZX84-C47 X7 BAV99 A7 F M M D I0 9 4A BAW 56 A1 FM M D 914 5D B Z X 8 4 C2V7 W4


    OCR Scan     		PDF OT-23 BAV70 BZX84-C43 BZX84-C47 BAV99 FMMD109 BAW56 FMMD914 BZX84 FMMD3102 marking z7 Z4 SOT23 FMMD3102 BZX84C18 C5V6 BZX84C5V6 z3 ZC831 marking Y4 C3V9 FMMD914

    81g diode

    Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
    Text: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232


    OCR Scan     		PDF BZX84C 350mW MMBZ5221B 5256B BZX84 Z17/W9 81g diode 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v

    Z6 DIODE

    Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		PDF ECG109 ECG110A ECG110MP ECG113A ECG114 DO-27 ECG515 ECG551 ECG117A ECG556 Z6 DIODE z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP

    BZX 12v zener diode

    Abstract: No abstract text available
    Text: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240


    OCR Scan     		PDF BZX84C MMBZ5221B 5256B 500pcs. BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10V BZX84C1IV BZX84C12V BZX 12v zener diode

    1n700

    Abstract: diode 1N750 1N750 zener 1N751 1N753 1N750 400mW 1N746 1N747 1N748 1N749
    Text: Zener Diodes • 1N746A— 1N759A P =400m W Package : DO-35 Vz Part No. Zz Ranking A Iz (mA) ( fl) Max. Iz (mA) Ir C/*A) Max. Vr (V) ESffl r 1N746 3.14—3.47 20 28 20 10 1 hvat ’ ' 3.42—3.78 20 24 20 10 1 1 WSi 1N747 1N748 3.71—4.10 20 23 20 10 B 3 ! ' 1N749


    OCR Scan     		PDF MN746Aâ 1N759A 400mW DO-35) 1N746 1N747 1N748 1N749 1N750 1N751 1n700 diode 1N750 1N750 zener 1N753 1N750 400mW

    BZX 5V6

    Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
    Text: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)


    OCR Scan     		PDF CB-166 OT-23) 55-C11 BZX 5V6 BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v

    1SS254

    Abstract: 1SS252 glass diode yellow band recovery diodes 1SS254 1SS253
    Text: Diode, switching, leaded 15 5 252 15 5 253 15 5 254 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards7878. They have a high switching speed. The reverse recovery time (trr is typically 1.5 ns.) Dimensions (Units : mm)


    OCR Scan     		PDF boards7878. 1SS252 1SS253 1SS254 1SS254 glass diode yellow band recovery diodes 1SS254

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6

    sot23 transistor marking y2

    Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0


    OCR Scan     		PDF OT-23 OT-23 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 BZX84C4V3 MMBZ5230 BZX84C4V7 MMBZ5231 sot23 transistor marking y2 BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB

    155133

    Abstract: 1SS133 GREEN Color band DIODES DO 35 1SS131 glass diode yellow band 155131 1ss132 1ss133 diode recovery diodes 5 ns DIODE MARKING BLACK GREEN
    Text: Diode, switching, leaded 155131 155132 155133 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. They have a high switching speed. The reverse recovery time (trr is typically 1.5 ns.) Dimensions (Units : mm)


    OCR Scan     		PDF DO-34 1SS131 1SS132 1SS133 1SS133 155133 GREEN Color band DIODES DO 35 glass diode yellow band 155131 1ss133 diode recovery diodes 5 ns DIODE MARKING BLACK GREEN