Z3 TRANSISTOR Search Results

BF484

Abstract: BF486 BF488
Contextual Info: BF484 BF486 BF488 J . PHILIPS INTERNATIONAL 5bE D I 711002b 0042174 147 invideo PHIN T-31-Z3 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a TO -92 envelope and intended fo r use white and colour television receivers. • o utpu t stages o f biaok and

RFP12N06RLE

Abstract: RFD12N06RLE RFD12N06RLESM kos30
Contextual Info: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE

2sc1586

Contextual Info: <z3£fni-£onau.ct:oi iJ-^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA909 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo= -200V(Min.)

Contextual Info: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary

MCT210

Contextual Info: fs E SOLID STATE 01 DE | 3ñ7S0 ñl_0 Dnfi7t 2 Optoelectronic Specifications. T -m -Z3 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor M IN A 8 C P E F G H J K M N P R S TOCovered under U .L . component recognition program,

Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 Small Signal Transistors PRODUCT SPECIFICATIONS 7597360 RAYTHEON IE O N . GC » r i Y S T Y B L O 00D5517 S E M IC O N D U C TO R . Ä 05517 94D High Voltage General Purpose Amplifiers and Switches D T - ¿? -Z3 PNP Popular Types

BD934

Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Contextual Info: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.

bfy56

Abstract: BFX56 BFY56A 5014M Y56A
Contextual Info: 3DE D rZ Z ^7# • DOBIOCH 4 ■ '"’p S ' ,Z3> S G S -T H O M S O N BFY56 BFX56A S G S-THOMSON AMPLIFIERS AND SWITCHES DESCRIPTIO N The BFX56 and BFY56A are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for amplifier and switching applica­

QQG1703

Contextual Info: bllSñbS DGQ1703 Ifll • M S C 5SE D T-II-Z3 TS-7 MICROSEMI CORP MicrojsemiCorp. 9 rfieaoae experts SCOTTSDALE, AZ SANTA AHA, CA FormoreinfonnationcaU; '" s ’ - FEATURES TRANSIENT ABSORPTION •■' ZENER • PROTECTS T T L ECL. DTL, MOS, CMOS AND MSI INTEGRATED CIRCUITS OPERATING ON POWER

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

Transistor BFR 35

Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

Contextual Info: T'?£~z3~/z_ Sflbfl 4 5 b OGGITM? 323 • M M H S January 1991 MATRA M H S HM 65664 HI-REL DATA SHEET 8kx8 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPLLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN

TP3009

Abstract: TP3009S
Contextual Info: MbE D MOTOROLA SC XSTRS/R F • b3b?254 OQ'JSHS b ■ M O T L T-5I-Z3 MOTOROLA ■ SEMICONDUCTOR ■ TECHNICAL DATA TP3009 TP3009S The RF Un UHF P o w e r T ran sisto rs 0.76 W — 900 HMz UHF POWER TRANSISTORS NPN SILICON The TP3009/5 is designed for 12.5 V, 900 MHz common-emitter amplifier operating in

Contextual Info: 30E 3> un • 7^237 0D31Q77 T ■ -Z3 B S Y 53 B S Y 54 S G S -T H O M S O N laJÛTTOMDigS S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESC RIPTIO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in general purpose amplifiers.

67005

Contextual Info: ¿f o-Z3~ IZ 4 SE D Söbä4Sb QQG13M4 1 2 e! • H f l H S Preview September 1990 MATRA M H S M 67005 DATA SHEET 8 Kx8 CMOS DUAL PORT RAM FEATURES FAST ACCESS TIME: - MILITARY : 35 TO 55 ns (max - COMMERCIAL : 25 TO 55 ns (max) VERY LOW POWER CONSUMPTION :

MWS5101EL3

Abstract: MWS5101EL3X MWS5101DL3 MWS5101ADL3
Contextual Info: HARRIS^SEm COND MbE D SECTOR 430E271 003^047 b IHAS MWS5101 MWS5101A T-~4 fc~Z3 ' 0 y HARRIS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MWS5101A are 256 word by 4 bit static

bzx98c

Abstract: 1N30098 Z3813 Z3827 in137
Contextual Info: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power

CD40248

Abstract: cd40408 CD4020B C04020B CS207 C040408 CD4040B CD4040B Types CD4024B KHA 159
Contextual Info: 44.E HA R R I S S E U I C O N D S E C T O R D • 4302271 GG373aS 5 ■ H A S 7=-VS-Z3-/ 7 2 C D 4020B , C D 4024B , C D 4040B Types H A R R IS Features: CMOS Ripple-Carry Binary Counter/Dividers ■ ■ ■ ■ ■ H igh-Voltage Types 2 0 -V o lt Rating)

xps-CM

Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
Contextual Info: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed

Contextual Info: MICROPAC IN DUS TRIES INC 1SE D b l l E t » 4 Q QQQObSö fi 66004, 66005 // HIGH VOLTAGE OPTO-ISOLATORS O P T O E L E C T R O N IC PR O D U C TS • D IV IS IO N ~r-y/-z3 40,000 V FEATURES 0 .0 1 6 BLACK DOT / J 2 LEADS High tem perature operation + 1 2 5 4C

Contextual Info: POWEREX INC m u 3*ìE D m x • TSTMbSl DDOMIGÖ b M P R X _ T^Z3~3^ K R 421K 15 Pow erex, In c ., HIIHs Street, Youngw ood, Pennsylvania T5697 4 1 2 925-7272 C h o p p e r D a r lìn g tO ll Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 4 1 .14 .1 4

642J

Abstract: 6N137 NEC photo coupler
Contextual Info: N E C ELECTRONICS 6427525 N E C I NC 73 DE P b 4 S 7 S E S 0 0 a EJ E43 EL EC TR ONI CS , INC ¡ NEC NEC Electronics Inc. 72C ¿ 9 2 4 3 T-HÌ-Z3 D 6N137 HIGH S PEED PH OTO CO U P LER • N E P O C SERIES D e s c rip tio n F e a tu re s The 6N137 is a high speed photo coupler containing a

mjM6052

Contextual Info: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max