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    A109D

    Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
    Text: HY51V17400B Series •YUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V17400B 51V17400B 0260X68040) 157BSC 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSD A109D max3843 lcd hyundai WWD 3P hyundai hy 555 PDF

    Untitled

    Abstract: No abstract text available
    Text: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116404A HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404AR PDF

    Untitled

    Abstract: No abstract text available
    Text: • HSEMICONDUCTOR YUNDAI HYM540400 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5116400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each


    OCR Scan     		HYM540400 40-bit HY5116400 HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG PDF

    iA17

    Abstract: No abstract text available
    Text: HY62V8400 Series •H YUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using yundai’s high perfromance twin tub CMOS process technology. The HY62V8400 has a data retention mode that


    OCR Scan     		HY62V8400 512KX 55/70/85/100ns -100/120/150/200ns 240BSC 525mil 1DE03-11-MAY95 iA17 PDF

    NCC 5551

    Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
    Text: HY6264A-I Series •YUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit


    OCR Scan     		HY6264A-I 1DB02-11-M 0000BSC 330mil 878ft 1DB02-11-MAY9S HY6264ALP-I HY6264ALLP-I NCC 5551 SS LSE 0530 HY6264AL ZT 5551 y626 PDF

    M6312

    Abstract: No abstract text available
    Text: PRELIMINARY ••H YUNDAI SEMICONDUCTOR HY234001 “ rom M631200A-MAY92 FEATURES DESCRIPTION The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It is fabricated using YUNDAI’S CMOS pro­ cess technology. The HY234001 operates with


    OCR Scan     		HY234001 HY234001-15 HY234001 M631200A-MAY92 32-pin HY234001-20 HY234 M6312 PDF

    Untitled

    Abstract: No abstract text available
    Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using yundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees


    OCR Scan     		HY62V256 HV62V256 55/70/85/100ns 100/120/150ns 1DC03-11-MAY95 HY62V256LP HY62V256LJ PDF

    Untitled

    Abstract: No abstract text available
    Text: «YUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes yundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		1Mx16, 16-bit 1Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    Untitled

    Abstract: No abstract text available
    Text: YUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


    OCR Scan     		HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM PDF

    HY514264

    Abstract: No abstract text available
    Text: •YUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		HY514264B 256Kx16, 16-bit 40-pin 400mil) 16-bits 256Kx16 HY514264 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^YUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and


    OCR Scan     		HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96 PDF

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -YUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes yundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU PDF

    HYM532414

    Abstract: HY5117404
    Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		HYM532414 32-bit HY5117404A HYM532414TNG/SLTNG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 YM532414 HY5117404 PDF

    HY57V168

    Abstract: hy57v168010 1sd31 66MHz
    Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The yundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of


    OCR Scan     		168010C 216-bits 576x8. 57V168010C 400mil 44pin 047CK 1SD31-11-MAR98 HY57V168 hy57v168010 1sd31 66MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		HY514260B 256KX16, 16-bit 16-bits 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62256B-0 Series • • H Y U N D A I 32Kx8bit CM OS SRAM DESCRIPTION FEATURES The HY62256B/ HY62256B-I is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using yundai's high performance CMOS process technology. It is


    OCR Scan     		HY62256B- 32Kx8bit HY62256B/ HY62256B-I 330mil 28pin PDF

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes yundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan     		HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421 PDF

    Untitled

    Abstract: No abstract text available
    Text: HHYUIIPIH > — • HY534256A 2S6Kx4, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic R A M o rg a n iz e d 2 6 2 ,1 4 4 x 4 - b it c o n fig u ra tio n w ith F a st P age m o de CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		HY534256A HY534256ALJ) PDF

    HY5117400A

    Abstract: No abstract text available
    Text: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes yundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A 1AD27-10-M HY5117400AJ HY5117400ASU HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15) PDF

    HY51V65404

    Abstract: Yundai v64_5
    Text: H Y U N D A I H Y 5 1 V 6 5 4 0 4 , H Y 5 1 V 6 4 4 0 4 16M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		12tREF 128ms cycle/64ms) HY51V65404 Yundai v64_5 PDF