YG801C Search Results

DIODE C06

Abstract: A408 a410 H125 YG801C06 40h12
Contextual Info: YG801C06I5A S' 3 ‘y | * +— • ü-Jfê'tfSi I O utline D raw ings SCHOTTKY BARRIER DIODE : Features ft tt BuPlfilf 3 #ifc 7Ji>*—JUK9< 7 • Insulated package by fully m olding. • ttV F Low V f ■ W S tt Connection Diagram Super high speed switching.

Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG801C04I5A ’• O utlin e D ra w in g s 4-7 ma». SCHOTTKY BARRIER DIODE 10.5max. ¡¿ih 2.7 1.2 Til 2.54 Features 0.7 0.6 2.7 2.54 JEDEC Insulated package by fu lly m o ld in g . SC-67 EIAJ M &V f Low V f m m & m C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g .

T151

Abstract: TH25 A406
Contextual Info: YG801C04 5A SCHOTTKY BARRIER DIODE I t t J t : Features Insulated package by fully m olding. ><£Vf Low V f * U :» i' Connection Diagram Super high speed sw itching. »T V - * - a W l U S f c f S l i t t High reliability by planer design. i Applications

DIODE C04 06

Abstract: C04 06
Contextual Info: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f

H125

Abstract: YG801C06 A4-10 DIODE C06 A408
Contextual Info: YG801C06I5A S' 3 ‘y | * +— • ü-Jfê'tfSi I O utline D raw ings SCHOTTKY BARRIER DIODE : Features ft tt BuPlfilf 3 #ifc 7Ji>*—JUK9< 7 • Insulated package by fully m olding. • ttV F Low V f ■ W S tt Connection Diagram Super high speed switching.

Contextual Info: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

TC9010

Contextual Info: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0

YG801C09

Contextual Info: YG801C09I5A '> 3 - yh+— t - v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f ■ WKSIffi Low Vf C onnection Diagram Super high speed sw itchin g. • T V - * - 8 t t High reliability by planer design. r-W-iH«-n

YG801C09R

Contextual Info: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

YG801C04R

Abstract: TC9010
Contextual Info: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0

Contextual Info: YG801C10R 100V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

TT460

Contextual Info: YG801C06 5A : Outline Drawings SCHOTTKY BARRIER DIODE • 4 » : Features Insulated package by fu lly m oldin g. • te V F Low V f C onnection Diagram Super high speed sw itching. High reliability by planer design. ■ ffliis A p p lic a tio n s High speed pow er sw itching.

YG801C09

Abstract: TIL 413 yg801c
Contextual Info: YG801C09I5A '> 3 - yh+— t-v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f Low Vf ■ WKSIffi C onnection Diagram Super high speed sw itchin g. •T V - * - 8 t t r-W-iH«-n > ©<3 High reliability by planer design.

GIJ diode

Abstract: GGT DIODE YG801C06 A410 DIODE C06 15 iej mi
Contextual Info: YG801C06 5 a : Outline Drawings SCHOTTKY BARRIER DIODE : Features • 3i y ft i s n * 7^ - ; u ffi&i&m 7 Insulated package by fully molding. •te V F Low V f Connection Diagram Super high speed switching. • y \ s - T - ftttcj&Kfi High reliability by planer design.

Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

DIODE C04 06

Abstract: A407 yg801c
Contextual Info: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f

YG801C06R

Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

YG801C09

Abstract: S4b0
Contextual Info: Y G 8 0 1 C O S IL A — k '> 3 y h + - / < i ; r y - f 5 r - K SCHOTTKY BARRIER DIODE • ¡H fJ l: Features Insulated package by fully m olding. Low V f C onnection D iagram S uper'high speed sw itchin g. • a * C = « # fl S tt High reliability by planer design.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646