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    YG801 Price and Stock

    SMC Corporation of America C96YG80-1000C

    CYLINDER, TIE ROD, AIR, C96 SERIES | SMC Corporation C96YG80-1000C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C96YG80-1000C Bulk 5 Weeks 1
    • 1 $713.84
    • 10 $713.84
    • 100 $713.84
    • 1000 $713.84
    • 10000 $713.84
    		Get Quote

    Fuji Electric Co Ltd YG801C04RF119

    5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components YG801C04RF119 380
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.75
    • 10000 $0.75
    		Buy Now

    YG801 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YG801C Fuji Electric Scan PDF
    YG801C04 High Voltage Power Systems SCHOTTKY BARRIER DIODE Original PDF
    YG801C04 Fuji Electric SCHOTTKY BARRIER DIODE Scan PDF
    YG801C04 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    YG801C04R Fuji Electric Schottky Barrier Diode Original PDF
    YG801C04R Fuji Electric SCHOTTKY BARRIER DIODE Original PDF
    YG801C06 Fuji Electric SCHOTTKY BARRIER DIODE Original PDF
    YG801C06 Fuji Electric SCHOTTKY BARRIER DIODE Scan PDF
    YG801C06 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    YG801C06R Fuji Electric Schottky Barrier Diode Original PDF
    YG801C06R Fuji Electric SCHOTTKY BARRIER DIODE Original PDF
    YG801C09 Fuji Electric SCHOTTKY BARRIER DIODE Scan PDF
    YG801C09 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    YG801C09R Fuji Electric Schottky Barrier Diode Original PDF
    YG801C09R Fuji Electric SCHOTTKY BARRIER DIODE Original PDF
    YG801C10R Fuji Electric SCHOTTKY BARRIER DIODE Original PDF

    YG801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C06R O-22OF15) 13Min SC-67

    Untitled

    Abstract: No abstract text available
    Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C09R O-22OF15) 13Min SC-67 500ns,

    TC9010

    Abstract: No abstract text available
    Text: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0


    Original     		PDF YG801C04R O-22OF15) 13Min SC-67 500ns, TC9010

    YG801C09R

    Abstract: No abstract text available
    Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C09R O-22OF15) 13Min SC-67 500ns, YG801C09R

    YG801C04R

    Abstract: TC9010
    Text: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0


    Original     		PDF YG801C04R O-22OF15) 13Min SC-67 500ns, YG801C04R TC9010

    Untitled

    Abstract: No abstract text available
    Text: YG801C10R 100V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C10R O-22OF15) 13Min SC-67

    Untitled

    Abstract: No abstract text available
    Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C06R O-22OF15) 13Min SC-67

    YG801C06R

    Abstract: No abstract text available
    Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2


    Original     		PDF YG801C06R O-22OF15) 13Min SC-67 YG801C06R

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    DIODE C06

    Abstract: A408 a410 H125 YG801C06 40h12
    Text: YG801C06I5A S' 3 ‘y | * +— • ü-Jfê'tfSi I O utline D raw ings SCHOTTKY BARRIER DIODE : Features ft tt BuPlfilf 3 #ifc 7Ji>*—JUK9< 7 • Insulated package by fully m olding. • ttV F Low V f ■ W S tt Connection Diagram Super high speed switching.


    OCR Scan     		PDF YG801C06I5A) SC-67 YG801C06 YG801 DIODE C06 A408 a410 H125 40h12

    Untitled

    Abstract: No abstract text available
    Text: YG801C04I5A ’• O utlin e D ra w in g s 4-7 ma». SCHOTTKY BARRIER DIODE 10.5max. ¡¿ih 2.7 1.2 Til 2.54 Features 0.7 0.6 2.7 2.54 JEDEC Insulated package by fu lly m o ld in g . SC-67 EIAJ M &V f Low V f m m & m C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g .


    OCR Scan     		PDF YG801C04I5A) SC-67 l95t/R89 Shl50

    T151

    Abstract: TH25 A406
    Text: YG801C04 5A SCHOTTKY BARRIER DIODE I t t J t : Features Insulated package by fully m olding. ><£Vf Low V f * U :» i' Connection Diagram Super high speed sw itching. »T V - * - a W l U S f c f S l i t t High reliability by planer design. i Applications


    OCR Scan     		PDF YG801C0415A) SC-67 500ns, e3Te30S3% I95t/R89) T151 TH25 A406

    DIODE C04 06

    Abstract: C04 06
    Text: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f


    OCR Scan     		PDF YG801C0415A) 500ns, YG801 DIODE C04 06 C04 06

    YG801C09

    Abstract: No abstract text available
    Text: YG801C09I5A '> 3 - yh+— t - v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f ■ WKSIffi Low Vf C onnection Diagram Super high speed sw itchin g. • T V - * - 8 t t High reliability by planer design. r-W-iH«-n


    OCR Scan     		PDF YG801C09I5A) 500ns, YG801C09

    TT460

    Abstract: No abstract text available
    Text: YG801C06 5A : Outline Drawings SCHOTTKY BARRIER DIODE • 4 » : Features Insulated package by fu lly m oldin g. • te V F Low V f C onnection Diagram Super high speed sw itching. High reliability by planer design. ■ ffliis A p p lic a tio n s High speed pow er sw itching.


    OCR Scan     		PDF YG801C06 TT460

    YG801C09

    Abstract: TIL 413 yg801c
    Text: YG801C09I5A '> 3 - yh+— t-v K SCHOTTKY BARRIER DIODE • W f t : Features Insulated package by fully m o ld in g . • te V f Low Vf ■ WKSIffi C onnection Diagram Super high speed sw itchin g. •T V - * - 8 t t r-W-iH«-n > ©<3 High reliability by planer design.


    OCR Scan     		PDF YG801C09I5A) 500ns, YG801C09 TIL 413 yg801c

    Fuji Electric SM

    Abstract: No abstract text available
    Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


    OCR Scan     		PDF YG801C09R Fuji Electric SM

    GIJ diode

    Abstract: GGT DIODE YG801C06 A410 DIODE C06 15 iej mi
    Text: YG801C06 5 a : Outline Drawings SCHOTTKY BARRIER DIODE : Features • 3i y ft i s n * 7^ - ; u ffi&i&m 7 Insulated package by fully molding. •te V F Low V f Connection Diagram Super high speed switching. • y \ s - T - ftttcj&Kfi High reliability by planer design.


    OCR Scan     		PDF YG801C06I5A) SC-67 I95t/R89 Shl50 GIJ diode GGT DIODE YG801C06 A410 DIODE C06 15 iej mi

    yg801c

    Abstract: No abstract text available
    Text: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na


    OCR Scan     		PDF YG801C06R yg801c

    DIODE C04 06

    Abstract: A407 yg801c
    Text: YG801C04 5A ,<' x) 7 ¥ ä '^—K MW-M^îè •Outline Drawings 4.7 max. SCHOTTKY BARRIER DIODE ] 0.5 m ax., 2.7 1.2 (H 2.54 Features • ASVft fifty ) ^ - ) V V94~7 0.7 0.6 2.54 2.7 JEDEC Insulated package by fully m olding. SC-67 EIAJ • te V F Low V f


    OCR Scan     		PDF YG801C0415A) 500ns, YG801 DIODE C04 06 A407 yg801c

    YG801C09

    Abstract: S4b0
    Text: Y G 8 0 1 C O S IL A — k '> 3 y h + - / < i ; r y - f 5 r - K SCHOTTKY BARRIER DIODE • ¡H fJ l: Features Insulated package by fully m olding. Low V f C onnection D iagram S uper'high speed sw itchin g. • a * C = « # fl S tt High reliability by planer design.


    OCR Scan     		PDF I95t/R89) Shl50 YG801C09 S4b0

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan     		PDF 2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082