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    Y12E Search Results

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    Y12E Price and Stock

    APEM Inc Q8P1BXXY12E

    INDICATOR 12V 8MM PROMINENT YEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Q8P1BXXY12E Bulk 89 1
    • 1 $15.51
    • 10 $15.51
    • 100 $15.51
    • 1000 $9.07704
    • 10000 $9.07704
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    Master Electronics Q8P1BXXY12E 91
    • 1 -
    • 10 $11.1
    • 100 $7.04
    • 1000 $5.12
    • 10000 $5.12
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    APEM Inc Q14F1BXXY12E

    INDICATOR 12V 14MM FLUSH YELLOW
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    DigiKey Q14F1BXXY12E Bulk 86 1
    • 1 $9.03
    • 10 $9.03
    • 100 $9.03
    • 1000 $5.7625
    • 10000 $5.7625
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    Mouser Electronics Q14F1BXXY12E 7
    • 1 $10.75
    • 10 $10.23
    • 100 $7.55
    • 1000 $5.76
    • 10000 $5.76
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    APEM Inc Q8P5BXXHY12E

    INDICATOR 8MM PM PROMINENT YELLO
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    DigiKey Q8P5BXXHY12E Tray 41 1
    • 1 $26.72
    • 10 $26.72
    • 100 $26.72
    • 1000 $17.1109
    • 10000 $17.1109
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    RS Q8P5BXXHY12E Bulk 14 Weeks 25
    • 1 -
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    • 100 $19.09
    • 1000 $19.09
    • 10000 $19.09
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    Master Electronics Q8P5BXXHY12E
    • 1 $21.95
    • 10 $19.58
    • 100 $12.64
    • 1000 $10.65
    • 10000 $10.65
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    APEM Inc Q14F5CXXHY12E

    LED INDICATOR 14MM FLUSH CHROME
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    DigiKey Q14F5CXXHY12E Bulk 37 1
    • 1 $31.45
    • 10 $31.45
    • 100 $31.45
    • 1000 $31.45
    • 10000 $31.45
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    APEM Inc Q12-7P1CXXHY12E

    LED INDICATOR 12.7MM PROMINENT H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Q12-7P1CXXHY12E Bulk 24 1
    • 1 $22.2
    • 10 $22.2
    • 100 $22.2
    • 1000 $13.9318
    • 10000 $13.9318
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    Y12E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC59SM816BFT

    Abstract: THMY12E11B70
    Text: TO SH IBA THM Y12E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E11B is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		THMY12E11B70 216-WORD 72-BIT THMY12E11B TC59SM816BFT 72-bit PDF

    TESLA BP 4651

    Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
    Text: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N


    OCR Scan     		FACHGEBIET391 TESLA BP 4651 tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM PDF

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


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    400HA-12E

    Abstract: CM100TF-12e
    Text: POliJEREX I NC BTE I> • 72=^21 DDG37SS 1 HPRX T^2 W HHBSX_ _ Powerex, Inc., HilUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 EFFICIENT E-SERIES IGBTMOD TRANSISTOR POWER MODULES


    OCR Scan     		DDG37SS BP107, 400HA-12E CM100TF-12e PDF

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t PDF

    THMY12E10A70

    Abstract: ras 1215
    Text: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		THMY12E10A70 216-WORD 72-BIT THMY12E10A TC59SM708AFT 72-bit THMY12E10A) ras 1215 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing PDF

    RA9-RA10

    Abstract: 08l01
    Text: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		THMY12E10A70 THMY12E10A 216-word 72-bit TC59SM708AFT 72-bit Y12E10A) RA9-RA10 08l01 PDF

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


    OCR Scan     		C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P PDF

    THMY12E10A70

    Abstract: No abstract text available
    Text: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		THMY12E10A70 216-WORD 72-BIT THMY12E10A TC59SM708AFT 72-bit THMY12E10A) PDF

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A PDF

    Untitled

    Abstract: No abstract text available
    Text: HOLTEK r r HT1608L 2x20 Channel LCD Driver Features • • • • O perating voltage: 2.7V~5.2V LCD driving voltage: 3.0V~5.0V 40 in tern al LC D drivers av ailab le B ia s voltage: static to 1/5 b ias • • LC D driver with serial/p arallel conversion


    OCR Scan     		HT1608L 1608L HT1608L PDF

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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